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BC817DS Datenblatt(PDF) 2 Page - NXP Semiconductors |
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BC817DS Datenblatt(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 2002 Nov 22 2 Philips Semiconductors Product specification NPN general purpose double transistor BC817DS FEATURES • High current (500 mA) • 600 mW total power dissipation • Replaces two SOT23 packaged transistors on same PCB area. APPLICATIONS • General purpose switching and amplification • Push-pull amplifiers • Multi-phase stepper motor drivers. DESCRIPTION NPN transistor pair in a SOT457 (SC-74) plastic package. MARKING TYPE NUMBER MARKING CODE BC817DS N3 PINNING PIN DESCRIPTION 1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 handbook, halfpage 13 2 4 5 6 Top view MAM340 13 2 TR1 TR2 6 4 5 Fig.1 Simplified outline (SOT457) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER MAX. UNIT VCEO collector-emitter voltage 45 V IC collector current (DC) 500 mA ICM peak collector current 1 A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor unless otherwise specified VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 45 V VEBO emitter-base voltage open collector − 5V IC collector current (DC) − 500 mA ICM peak collector current − 1A IBM peak base current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 370 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Per device Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 600 mW |
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