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BC817DS Datenblatt(PDF) 2 Page - NXP Semiconductors

Teilenummer BC817DS
Bauteilbeschribung  NPN general purpose double transistor
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BC817DS Datenblatt(HTML) 2 Page - NXP Semiconductors

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2002 Nov 22
2
Philips Semiconductors
Product specification
NPN general purpose double transistor
BC817DS
FEATURES
• High current (500 mA)
• 600 mW total power dissipation
• Replaces two SOT23 packaged transistors on same
PCB area.
APPLICATIONS
• General purpose switching and amplification
• Push-pull amplifiers
• Multi-phase stepper motor drivers.
DESCRIPTION
NPN transistor pair in a SOT457 (SC-74) plastic package.
MARKING
TYPE NUMBER
MARKING CODE
BC817DS
N3
PINNING
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
handbook, halfpage
13
2
4
5
6
Top view
MAM340
13
2
TR1
TR2
6
4
5
Fig.1
Simplified outline (SOT457) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
45
V
IC
collector current (DC)
500
mA
ICM
peak collector current
1
A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor unless otherwise specified
VCBO
collector-base voltage
open emitter
50
V
VCEO
collector-emitter voltage
open base
45
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
500
mA
ICM
peak collector current
1A
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
370
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
600
mW


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