IRF7329 datasheet(4/9 Pages) IRF

Teilenummer	IRF7329

Bauteilbeschribung	HEXFET POWER MOSFET

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Hersteller	IRF [International Rectifier]

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IRF7329

4

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0

10

20

30

40

50

60

70

0

2

4

6

8

10

Q , Total Gate Charge (nC)

G

I =

D

-9.2A

V

=-6V

DS

V

=-9.6V

DS

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1

10

100

0.1

1

10

100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

T

= 150 C

= 25 C

°

J

A

-V

, Drain-to-Source Voltage (V)

DS

100us

1ms

10ms

0.1

1

10

100

0.2

0.4

0.6

0.8

1.0

-V

,Source-to-Drain Voltage (V)

SD

V

= 0 V

GS

T = 25 C

J

°

T = 150 C

J

°

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