FDC655BN datasheet(3/6 Pages) FAIRCHILD

Teilenummer	FDC655BN

Bauteilbeschribung	Single N-Channel, Logic Level, PowerTrench MOSFET

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Hersteller	FAIRCHILD [Fairchild Semiconductor]

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FDC655BN Rev. C(W)

Typical Characteristics

0

5

10

15

20

25

01

2

3

V

DS, DRAIN-SOURCE VOLTAGE (V)

6.0V

3.5V

4.5V

3.0V

V

GS = 10V

4.0V

0.8

1

1.2

1.4

1.6

1.8

2

2.2

05

10

15

20

25

I

D, DRAIN CURRENT (A)

V

GS = 3.5V

6.0V

4.0V

4.5V

5.0V

10V

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.6

0.8

1

1.2

1.4

1.6

-50

-25

0

25

50

75

100

125

150

T

J, JUNCTION TEMPERATURE (°C)

I

D = 6.3A

V

GS = 10.0V

0.01

0.03

0.05

0.07

0.09

2468

10

V

GS, GATE TO SOURCE VOLTAGE (V)

I

D = 3.2A

T

A = 125

oC

T

A = 25

oC

Figure 3. On-Resistance Variation

withTemperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0

5

10

15

20

25

1.5

2

2.5

3

3.5

4

4.5

V

GS, GATE TO SOURCE VOLTAGE (V)

T

A = 125° C

-55

°C

V

DS = 5V

25

°C

0.0001

0.001

0.01

0.1

1

10

100

0

0.2

0.4

0.6

0.8

1

1.2

1.4

V

SD, BODY DIODE FORWARD VOLTAGE (V)

T

A = 125° C

25

°C

-55

°C

V

GS = 0V

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

Ähnliche Beschreibung - FDC655BN

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