©2005 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

April 2005

FDC655BN Rev. C(W)

FDC655BN

Features

■ 6.3 A, 30 V.

■ Fast switching

■ Low gate charge

■ High performance trench technology for extremely low Rdson

General Description

This N-Channel Logic Level MOSFET is produced using Fair-

child Semiconductor’s advanced PowerTrench process that has

been especially tailored to minimized on-state resistance and

yet maintain superior switching performance.

These devices are well suited for low voltage and battery pow-

ered applications where low in-line power loss and fast switch-

ing are required.

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Drain Current

– Continuous

(Note 1a)

6.3

A

– Pulsed

20

Maximum Power Dissipation

(Note 1a)

1.6

W

(Note 1b)

0.8

Operating and Storage Junction Temperature Range

– 55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

78

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

30

°C/W

Device Marking

Device

Reel Size

Tape width

Quantity

.55B

FDC655BN

7’’

8mm

3000 units

1

2

3

6

5

4

D

D

SuperSOT-6

TM

D

G

D

55B

S