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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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SI5504DC Datenblatt(PDF) 6 Page - Vishay Siliconix |
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SI5504DC Datenblatt(HTML) 6 Page - Vishay Siliconix |
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6 / 7 page  Si5504DC Vishay Siliconix www.vishay.com 2-6 Document Number: 71056 S-21251—Rev. B, 05-Aug-02 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL 0 30 50 10 20 Single Pulse Power Time (sec) 40 1 100 600 10 10-1 10-2 10-4 10-3 1.2 1.5 0.1 10 0.00 0.3 0.6 0.9 TJ = 25_C TJ = 150_C Source-Drain Diode Forward Voltage VSD - Source-to-Drain Voltage (V) -0.4 -0.2 0.0 0.2 0.4 0.6 -50 -25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0 2468 10 VGS - Gate-to-Source Voltage (V) 0 2 4 6 8 10 0 123 456 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 Gate Charge Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature VGS = 10 V ID = 2.1 A TJ - Junction Temperature (_C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage TJ - Temperature (_C) ID = 250 mA VDS = 15 V ID = 2.1 A ID = 2.1 A |
Ähnliche Teilenummer - SI5504DC |
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Ähnliche Beschreibung - SI5504DC |
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