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SI6423DQ Datenblatt(PDF) 2 Page - Vishay Siliconix |
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SI6423DQ Datenblatt(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si6423DQ Vishay Siliconix New Product www.vishay.com 2 Document Number: 72257 S-31419—Rev. A, 07-Jul-03 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 400 mA - 0.40 - 0.8 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = - 9.6 V, VGS = 0 V -1 mA Zero Gate Voltage Drain Current IDSS VDS = - 9.6 V, VGS = 0 V, TJ = 70_C -10 mA On-State Drain Currenta ID(on) VDS -5 V, VGS = - 4.5 V -20 A VGS = - 4.5 V, ID = - 9.5 A 0.0068 0.0085 Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 8.5 A 0.0085 0.0106 W DS(on) VGS = - 1.8 V, ID = - 7.5 A 0.0112 0.014 Forward Transconductancea gfs VDS = - 15 V, ID = - 9.5 A 45 S Diode Forward Voltagea VSD IS = - 1.3 A, VGS = 0 V - 0.58 - 1.1 V Dynamicb Total Gate Charge Qg 74 110 Gate-Source Charge Qgs VDS = - 6 V, VGS = - 5 V, ID = - 9.5 A 9.0 nC Gate-Drain Charge Qgd 19 Gate Resistance Rg 3.6 W Turn-On Delay Time td(on) 50 75 Rise Time tr VDD = - 6 V, RL = 6 W 75 110 Turn-Off Delay Time td(off) VDD = - 6 V, RL = 6 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W 270 400 ns Fall Time tf 200 300 Source-Drain Reverse Recovery Time trr IF = - 1.3 A, di/dt = 100 A/ms 160 250 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 6 12 18 24 30 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 6 12 18 24 30 0 1234 5 VGS = 5 thru 2 V TC = 125_C -55 _C 25 _C Output Characteristics Transfer Characteristics VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) 1.5 V |
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