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SI6423DQ Datenblatt(PDF) 2 Page - Vishay Siliconix

Teilenummer SI6423DQ
Bauteilbeschribung  P-Channel 12-V (D-S) MOSFET
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Hersteller  VISHAY [Vishay Siliconix]
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SI6423DQ Datenblatt(HTML) 2 Page - Vishay Siliconix

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Si6423DQ
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72257
S-31419—Rev. A, 07-Jul-03
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 400 mA
- 0.40
- 0.8
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "8 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 9.6 V, VGS = 0 V
-1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = - 9.6 V, VGS = 0 V, TJ = 70_C
-10
mA
On-State Drain Currenta
ID(on)
VDS -5 V, VGS = - 4.5 V
-20
A
VGS = - 4.5 V, ID = - 9.5 A
0.0068
0.0085
Drain-Source On-State Resistancea
rDS(on)
VGS = - 2.5 V, ID = - 8.5 A
0.0085
0.0106
W
DS(on)
VGS = - 1.8 V, ID = - 7.5 A
0.0112
0.014
Forward Transconductancea
gfs
VDS = - 15 V, ID = - 9.5 A
45
S
Diode Forward Voltagea
VSD
IS = - 1.3 A, VGS = 0 V
- 0.58
- 1.1
V
Dynamicb
Total Gate Charge
Qg
74
110
Gate-Source Charge
Qgs
VDS = - 6 V, VGS = - 5 V, ID = - 9.5 A
9.0
nC
Gate-Drain Charge
Qgd
19
Gate Resistance
Rg
3.6
W
Turn-On Delay Time
td(on)
50
75
Rise Time
tr
VDD = - 6 V, RL = 6 W
75
110
Turn-Off Delay Time
td(off)
VDD = - 6 V, RL = 6 W
ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W
270
400
ns
Fall Time
tf
200
300
Source-Drain Reverse Recovery Time
trr
IF = - 1.3 A, di/dt = 100 A/ms
160
250
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
6
12
18
24
30
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
6
12
18
24
30
0
1234
5
VGS = 5 thru 2 V
TC = 125_C
-55
_C
25
_C
Output Characteristics
Transfer Characteristics
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
1.5 V


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