Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD0662B Datenblatt(PDF) 1 Page - Panasonic Semiconductor |
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2SD0662B Datenblatt(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page Transistors 1 Publication date: November 2002 SJC00195BED 2SD0662, 2SD0662B (2SD662, 2SD662B) Silicon NPN epitaxial planar type For high breakdown voltage general amplification ■ Features • High collector-emitter voltage (Base open) V CEO • High transition frequency f T • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. ■ Absolute Maximum Ratings T a = 25°C ■ Electrical Characteristics T a = 25°C ± 3°C 6.9±0.1 2.5±0.1 (1.0) (1.5) (0.85) 0.45±0.05 0.55±0.1 (2.5) (2.5) 21 3 R 0.7 R 0.9 (1.5) Unit: mm 1: Base 2: Collector 3: Emitter M-A1 Package Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank P Q R hFE 30 to 100 60 to 150 100 to 220 Parameter Symbol Rating Unit Collector-base voltage 2SD0662 VCBO 250 V (Emitter open) 2SD0662B 400 Collector-emitter voltage 2SD0662 VCEO 200 V (Base open) 2SD0662B 400 Emitter-base voltage (Collector open) VEBO 5V Collector current IC 70 mA Collector power dissipation PC 600 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage 2SD0662 VCEO IC = 100 µA, IB = 0 200 V (Base open) 2SD0662B 400 Emitter-base voltage (Collector open) VEBO IE = 10 µA, I C = 05 V Collector-emitter cutoff current (Base open) ICEO VCE = 100 V, IB = 02 µA Forward current transfer ratio hFE * VCE = 10 V, IC = 5 mA 30 220 Collector-emitter saturation voltage VCE(sat) IC = 50 mA, I B = 5 mA 1.2 V Transition frequency fT VCB = 10 V, IE = −10 mA, f = 200 MHz 50 MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 10 pF (Common base, input open circuited) Note) The part numbers in the parenthesis show conventional part number. |
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