Datenblatt-Suchmaschine für elektronische Bauteile |
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STPS20H100CF Datenblatt(PDF) 2 Page - STMicroelectronics |
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STPS20H100CF Datenblatt(HTML) 2 Page - STMicroelectronics |
2 / 8 page STPS20H100CT/CF/CG/CR/CFP 2/8 Symbol Parameter Value Unit Rth (j-c) Junction to case TO-220AB / D 2PAK/I2PAK Per diode 1.6 °C/W ISOWATT220AB / TO-220FPAB Per diode 4 TO-220AB / D 2PAK/I2PAK Total 0.9 ISOWATT220AB / TO-220FPAB Total 3.2 °C/W Rth (c) TO-220AB / D 2PAK/I2PAK Coupling 0.15 ISOWATT220AB / TO-220FPAB Coupling 2.5 When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) THERMAL RESISTANCES Symbol Parameter Tests conditions Min. Typ. Max. Unit IR * Reverse leakage current Tj = 25°C VR =VRRM 4.5 µA Tj = 125°C 2 6 mA VF ** Forward voltage drop Tj = 25 °CIF = 8 A 0.71 V Tj=25 °CIF = 10 A 0.77 Tj=25 °CIF = 16 A 0.81 Tj=25 °CIF = 20 A 0.88 Tj = 125°C IF = 8 A 0.56 0.58 Tj = 125 °CIF = 10 A 0.59 0.64 Tj = 125 °CIF = 16 A 0.65 0.68 Tj = 125 °CIF = 20 A 0.67 0.73 Pulse test : * tp=5ms, δ <2% ** tp = 380 µs, δ <2% To evaluate the maximum conduction losses use the following equation : P=0.55xIF(AV) + 0.009 x IF 2 (RMS) STATIC ELECTRICAL CHARACTERISTICS (per diode) |
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