Datenblatt-Suchmaschine für elektronische Bauteile |
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IRFE110 Datenblatt(PDF) 4 Page - International Rectifier |
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IRFE110 Datenblatt(HTML) 4 Page - International Rectifier |
4 / 7 page IRFE110 4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 V ,Source-to-Drain Voltage (V) SD V = 0 V GS T = 150 C J ° T = 25 C J ° 0.1 1 10 100 1 10 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T = 150 C = 25 C ° ° J C V , Drain-to-Source Voltage (V) DS 100us 1ms 10ms 0 2 4 6 8 0 4 8 12 16 20 Q , Total Gate Charge (nC) G FOR TEST CIRCUIT SEE FIGURE I = D 13 3.5 A V = 20V DS V = 50V DS V = 80V DS 1 10 100 0 100 200 300 400 V , Drain-to-Source Voltage (V) DS V C C C = = = = 0V, C C C f = 1MHz + C + C C SHORTED GS iss gs gd , ds rss gd oss ds gd Ciss Coss Crss |
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