TD350IDT datasheet(5/11 Pages) STMICROELECTRONICS

Teilenummer	TD350IDT

Bauteilbeschribung	Advanced IGBT/MOSFET Driver

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Functional Description

TD350

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4

Functional Description

4.1 Input

The input is compatible with optocouplers or pulse

transformers. The input is triggered by the signal

edge and allows the use of low-sized, low-cost

pulse transformer. Input is active low (output is

high when input is low) to ease the use of

optocoupler. When driven by a pulse transformer,

the input pulse (positive and negative) width must

be larger than the minimum pule width tonmin.

4.2 Voltage reference

A voltage reference is used to create accurate

timing for the two-level turn-off with external

resistor and capacitor.

4.3 Desaturation protection

Desaturation protection ensures the protection of

the IGBT in the event of overcurrent. When the

DESAT voltage goes higher that 7V, the output is

driven low (with 2-level turn-off if applicable). The

FAULT output is activated. The FAULT state is

exited at the next falling edge of IN input.

A programmable blanking time is used to allow

enough time for IGBT saturation. Blanking time is

provided by an internal current source and

external capacitor.

DESAT input can also be used with an external

comparator for overcurrent or over temperature

detection.

4.4 Active Miller clamp

A Miller clamp allows the control of the Miller

current during a high dV/dt situation and can avoid

the use of a negative supply voltage.

During turn-off, the gate voltage is monitored and

the clamp output is activated when gate voltage

goes below 2V (relative to GND). The clamp

voltage is VL+3V max for a Miller current up to

500mA. The clamp is disabled when the IN input

is triggered again.

4.5 Two level turn-off

The two-level turn-off is used to increase the

reliability of the application.

During turn-off, gate voltage can be reduced to a

programmable level in order to reduce the IGBT

current (in the event of over-current). This action

avoids both dangerous overvoltage across the

IGBT, and RBSOA problems, especially at short

circuit turn-off.

Turn-off (Ta) delay is programmable through an

external resistor and capacitor for accurate timing.

Turn-off delay (Ta) is also used to delay the input

signal to prevent distortion of input pulse width.

4.6 Minimum ON time

In order to ensure the proper operation of the 2-

level turn-off function, the input ON time (Twin)

must be greater than the Twinmin value:

Twinmin=Ta+2*Rdel*Coff

Rdel is the internal discharge resistor and Coff is

the external timing capacitor.

Input signals smaller than Ta are ignored. Input

signals larger than Twinmin are transmitted to the

output stage after the Ta delay with minimum

width distortion (

∆Tw=Twout-Twin).

For an input signal width Twin between Ta and

Twinmin, the output width Twout is reduced below

Twin (pulse distortion) and the IGBT could be

partially turned on. These input signals should be

avoided during normal operation.

4.7 Output

The output stage is able to sink 2.3A and source

1.5A typical at 25°C (1.2A/0.75A minimum over

the full temperature range). Separated sink and

source outputs allow independent gate charge

and discharge control without an extra external

diode.

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