Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

2SA1648 Datenblatt(PDF) 1 Page - NEC

Teilenummer 2SA1648
Bauteilbeschribung  PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
Download  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

2SA1648 Datenblatt(HTML) 1 Page - NEC

  2SA1648 Datasheet HTML 1Page - NEC 2SA1648 Datasheet HTML 2Page - NEC 2SA1648 Datasheet HTML 3Page - NEC 2SA1648 Datasheet HTML 4Page - NEC 2SA1648 Datasheet HTML 5Page - NEC  
Zoom Inzoom in Zoom Outzoom out
 1 / 5 page
background image
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16121EJ3V0DS00 (3rd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1648,1648-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
c
2002
The mark
shows major revised points.
The 2SA1648 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
FEATURES
• Available for high-current control in small dimension
• Z type is a lead processed product and is deal for mounting a
hybrid IC.
• Mold package that does not require an insulating board or
insulation bushing
• Low collector saturation voltage:
VCE(sat)1 =
−0.3 V MAX. (IC = −3.0 A)
• Fast switching speed:
tf = 0.3
µs MAX. (IC = −3.0 A)
• High DC current gain and excellent linearity
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
−100
V
Collector to emitter voltage
VCEO
−60
V
Emitter to base voltage
VEBO
−7.0
V
Collector current (DC)
IC(DC)
−5.0
A
Collector current (pulse)
IC(pulse)
Note 1
−10
A
Base current (DC)
IB(DC)
−2.5
A
Total power dissipation (Tc = 25
°C)
PT
18
W
Total power dissipation (Ta = 25
°C)
PT
1.0
Note 2, 2.0Note 3
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
PACKAGE DRAWINGS (Unit: mm)
2
13
6.5 ±0.2
5.0 ±0.2
4
2.3
2.3
0.5 ±0.1
2.3 ±0.2
1.1 ±0.2
0.5 −0.1
+0.2
0.5 −0.1
+0.2
12
3
4
6.5±0.2
5.0±0.2
2.3 2.3
0.9
MAX.
2.3±0.2
0.5±0.1
0.8
MAX.
0.8
1.1±0.2
TO-252 (MP3Z)
ELECTRODE CONNECTION
1. Base
2. Collector
3. Emitter
4. Collector (Fin)
Notes 1.
PW
≤ 300
µs, Duty Cycle ≤ 10%
2.
Printing board mounted
3.
7.5 mm
2
× 0.7 mm ceramic board mounted
TO-251 (MP-3)


Ähnliche Teilenummer - 2SA1648

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
Inchange Semiconductor ...
2SA1648 ISC-2SA1648 Datasheet
276Kb / 2P
   isc Silicon PNP Power Transistor
logo
Renesas Technology Corp
2SA1648 RENESAS-2SA1648 Datasheet
345Kb / 2002P
   SILICON POWER TRANSISTOR
2002
logo
Inchange Semiconductor ...
2SA1648-Z ISC-2SA1648-Z Datasheet
245Kb / 2P
   isc Silicon PNP Power Transistor
logo
Renesas Technology Corp
2SA1648 RENESAS-2SA1648_15 Datasheet
345Kb / 7P
   PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
More results

Ähnliche Beschreibung - 2SA1648

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
NEC
2SA1743 NEC-2SA1743 Datasheet
130Kb / 6P
   PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
2SA1652 NEC-2SA1652 Datasheet
161Kb / 6P
   PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
2SA1742 NEC-2SA1742 Datasheet
126Kb / 6P
   PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
2SA1744 NEC-2SA1744 Datasheet
144Kb / 6P
   PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
2SA1845 NEC-2SA1845 Datasheet
139Kb / 6P
   PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
logo
Galaxy Semi-Conductor H...
2SA1615 BILIN-2SA1615 Datasheet
266Kb / 5P
   PNP Silicon Epitaxial Transistor for High-speed Switching
logo
Renesas Technology Corp
2SA1615 RENESAS-2SA1615_15 Datasheet
239Kb / 7P
   PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
2SA1742 RENESAS-2SA1742_15 Datasheet
250Kb / 8P
   PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
logo
NEC
2SA1645 NEC-2SA1645 Datasheet
143Kb / 6P
   PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
2SA1646 NEC-2SA1646 Datasheet
139Kb / 6P
   PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
2SA1650 NEC-2SA1650 Datasheet
148Kb / 6P
   PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
More results


Html Pages

1 2 3 4 5


Datenblatt Download

Go To PDF Page


Link URL




Privatsphäre und Datenschutz
ALLDATASHEETDE.COM
War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com