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STB16NK65Z-S Datenblatt(PDF) 1 Page - STMicroelectronics |
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STB16NK65Z-S Datenblatt(HTML) 1 Page - STMicroelectronics |
1 / 12 page 1/12 September 2005 STP16NK65Z STB16NK65Z-S N-CHANNEL 650V - 0.38 Ω - 13A TO-220 / I2SPAK Zener - Protected SuperMESH™ MOSFET Table 1: General Features s TYPICAL RDS(on) = 0.38Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capabil- ity for the most demanding applications. Such se- ries complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES Table 2: Order Codes Figure 1: Package Figure 2: Internal Schematic Diagram TYPE VDSS RDS(on) ID Pw STP16NK65Z STB16NK65Z-S 650 V 650 V < 0.50 Ω < 0.50 Ω 13 A 13 A 190 W 190 W 1 2 3 1 2 3 I²SPAK TO-220 SALES TYPE MARKING PACKAGE PACKAGING STP16NK65Z P16NK65Z TO-220 TUBE STB16NK65Z-S B16NK65Z I²SPAK TUBE Rev. 3 |
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