Datenblatt-Suchmaschine für elektronische Bauteile |
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STD2NB60T4 Datenblatt(PDF) 4 Page - STMicroelectronics |
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STD2NB60T4 Datenblatt(HTML) 4 Page - STMicroelectronics |
4 / 11 page STD2NB60/STD2NB60-1 4/11 Table 11. Source Drain Diode Note: 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Figure 3. Safe Operating Area Figure 4. Thermal Impedance Figure 5. Output Characteristics Figure 6. Transfer Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 3.3 A ISDM (1) Source-drain Current (pulsed) 13.2 A VSD (2) Forward On Voltage ISD = 3.3 A; VGS = 0 1.6 V trr Reverse Recovery Time ISD = 3.3 A; di/dt = 100 A/µs VDD = 100 V; Tj = 150 °C (see test circuit, Figure 18) 500 ns Qrr Reverse RecoveryCharge 2.1 µC IRRAM Reverse RecoveryCharge 8.5 A |
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Ähnliche Beschreibung - STD2NB60T4 |
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