Datenblatt-Suchmaschine für elektronische Bauteile |
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STBS513 Datenblatt(PDF) 4 Page - EIC discrete Semiconductors |
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STBS513 Datenblatt(HTML) 4 Page - EIC discrete Semiconductors |
4 / 4 page RATING AND CHARACTERISTIC CURVES ( STBS06H - STBS5D0 ) FIG.1 - PULSE DERATING CURVE FIG.2 - PULSE WAVEFORM 0 25 50 75 100 125 150 175 Ta, AMBIENT TEMPERATURE, ( °C) FIG.3 - STEADY STATE POWER DERATING FIG.4 - PULSE RATING CURVE Page 4 of 4 Rev. 03 : July 22, 2002 80 60 40 20 120 4.0 10 10 0 1.0 3.0 0 0.1 2.0 1.0 tp, PULSE W IDTH 100 100 125 175 0 25 50 75 150 0.1 µs 1.0 µs 10 µs 100 µs 10ms 1.0ms 200 TL, LEAD TEMPERATURE ( °C) tp 50 100 0 Tr = 10 µs Peak Value IRSM Half Value - IRSM T, TIME(ms) 1.0 2.0 3.0 4.0 0 2 TJ=25 °C Pulse W idth (tp) is defined as that point where the peak current decays to 50% of IRSM 10X1000 W aveform as defined by R.E.A. Single Phase Half W ave 60 Hz Resistive or Inductive load |
Ähnliche Teilenummer - STBS513 |
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Ähnliche Beschreibung - STBS513 |
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