Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

IRF6621 Datenblatt(PDF) 3 Page - International Rectifier

Teilenummer IRF6621
Bauteilbeschribung  The IRF6621 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance
Download  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF6621 Datenblatt(HTML) 3 Page - International Rectifier

  IRF6621 Datasheet HTML 1Page - International Rectifier IRF6621 Datasheet HTML 2Page - International Rectifier IRF6621 Datasheet HTML 3Page - International Rectifier IRF6621 Datasheet HTML 4Page - International Rectifier IRF6621 Datasheet HTML 5Page - International Rectifier IRF6621 Datasheet HTML 6Page - International Rectifier IRF6621 Datasheet HTML 7Page - International Rectifier IRF6621 Datasheet HTML 8Page - International Rectifier IRF6621 Datasheet HTML 9Page - International Rectifier  
Zoom Inzoom in Zoom Outzoom out
 3 / 9 page
background image
IRF6621
www.irf.com
3
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 
 Surface mounted on 1 in. square Cu board, steady state.
‚ Used double sided cooling , mounting pad.
ƒ Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Notes:
„ TC measured with thermocouple incontact with top (Drain) of part.
… Rθ is measured at TJ of approximately 90°C.
 Surface mounted on 1 in. square Cu (still
air).
ƒ Mounted to a PCB with
small clip heatsink (still air)
ƒ Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
Ri (°C/W)
τi (sec)
1.6195
0.000126
2.1406
0.001354
22.2887
0.375850
20.0457
7.410000
11.9144
99
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci=
τi/Ri
Ci=
τi/Ri
τ
τ
C
τ
4
τ
4
R
4
R
4
τ
5
τ
5
R
5
R
5
A
Absolute Maximum Ratings
Parameter
Units
PD @TA = 25°C
Power Dissipation
™
W
PD @TA = 70°C
Power Dissipation
™
PD @TC = 25°C
Power Dissipation
f
TP
Peak Soldering Temperature
°C
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Ambient
™g
–––
58
RθJA
Junction-to-Ambient
dg
12.5
–––
RθJA
Junction-to-Ambient
eg
20
–––
°C/W
RθJC
Junction-to-Case
fg
–––
3.0
RθJ-PCB
Junction-to-PCB Mounted
1.0
–––
Linear Derating Factor
™Ã
W/°C
1.4
0.017
270
-40 to + 150
Max.
42
2.2


Ähnliche Teilenummer - IRF6621

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
International Rectifier
IRF6621PbF IRF-IRF6621PbF Datasheet
266Kb / 10P
   DirectFETPower MOSFET 
IRF6621PBF IRF-IRF6621PBF Datasheet
266Kb / 10P
   Ideal for CPU Core DC-DC Converters
IRF6621PBF IRF-IRF6621PBF_15 Datasheet
266Kb / 10P
   Ideal for CPU Core DC-DC Converters
IRF6621TR1PBF IRF-IRF6621TR1PBF Datasheet
266Kb / 10P
   DirectFETPower MOSFET 
IRF6621TRPbF IRF-IRF6621TRPbF Datasheet
266Kb / 10P
   DirectFETPower MOSFET 
More results

Ähnliche Beschreibung - IRF6621

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
Infineon Technologies A...
IRF6668PBP INFINEON-IRF6668PBP Datasheet
636Kb / 10P
   The IRF6668PbF combines the latest HEXFET짰 Power MOSFET
08/28/06
IRF6715MPBBF INFINEON-IRF6715MPBBF Datasheet
282Kb / 9P
   The IRF6715MPbF combines the latest HEXFET짰 Power MOSFET
02/16/11
logo
International Rectifier
IRF6610 IRF-IRF6610 Datasheet
243Kb / 9P
   HEXFET Power MOSFET Silicon Technology with the advanced DirectFETTM
logo
Advanced Power Electron...
AP01L60AT A-POWER-AP01L60AT_10 Datasheet
111Kb / 5P
   Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness
logo
STMicroelectronics
STL40N10F7 STMICROELECTRONICS-STL40N10F7 Datasheet
851Kb / 15P
   Among the lowest RDS on the market
logo
International Rectifier
IRFP2410 IRF-IRFP2410 Datasheet
147Kb / 8P
   Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon
logo
Littelfuse
PGR-6100 LITTELFUSE-PGR-6100 Datasheet
2Mb / 1P
   The PGR-6100 combines the features
logo
Infineon Technologies A...
AUIRF1018ES INFINEON-AUIRF1018ES Datasheet
664Kb / 10P
   Specifically designed for Automotive applications, this HEXFET짰 Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
2015-11-23
logo
First Silicon Co., Ltd
FTK2304 FS-FTK2304 Datasheet
311Kb / 4P
   The FTK2304 uses advanced trench technology to
logo
TE Connectivity Ltd
C-1461401 TEC-C-1461401 Datasheet
133Kb / 2P
   removed the rib on the base to case
More results


Html Pages

1 2 3 4 5 6 7 8 9


Datenblatt Download

Go To PDF Page


Link URL




Privatsphäre und Datenschutz
ALLDATASHEETDE.COM
War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com