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IRFR1010Z Datenblatt(Datasheet) 1 Page - International Rectifier

Teile-Nr. IRFR1010Z
Beschreibung  AUTOMOTIVE MOSFET
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Hersteller  IRF [International Rectifier]
Homepage  http://www.irf.com
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9/29/04
www.irf.com
1
HEXFET® is a registered trademark of International Rectifier.
HEXFET® Power MOSFET
VDSS = 55V
RDS(on) = 7.5mΩ
ID = 42A
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
S
D
G
Description
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
Features
D-Pak
IRFR1010Z
I-Pak
IRFU1010Z
AUTOMOTIVE MOSFET
PD - 96897
IRFR1010Z
IRFU1010Z
Absolute Maximum Ratings
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
™
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS (Thermally limited) Single Pulse Avalanche Energyd
mJ
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
Ù
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
1.11
RθJA
Junction-to-Ambient (PCB mount)
ij
–––
40
°C/W
RθJA
Junction-to-Ambient
j
–––
110
220
110
See Fig.12a, 12b, 15, 16
140
0.9
± 20
Max.
91
65
360
42
-55 to + 175
300 (1.6mm from case )
10 lbf
yin (1.1Nym)




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