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KM68U1000BLTI-10 Datenblatt(PDF) 8 Page - Samsung semiconductor

Teilenummer KM68U1000BLTI-10
Bauteilbeschribung  128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
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Hersteller  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM68U1000BLTI-10 Datenblatt(HTML) 8 Page - Samsung semiconductor

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KM68V1000B, KM68U1000B Family
CMOS SRAM
Revision 2.0
March 1998
DATA RETENTION WAVE FORM
CS1 controlled
VCC
3.0/2.7V1)
2.2V
VDR
CS1
GND
Data Retention Mode
CS1
≥VCC - 0.2V
tSDR
tRDR
TIMING WAVEFORM OF WRITE CYCLE(3) (CS1 Controlled)
Address
CS1
tAW
NOTES (WRITE CYCLE)
1. A write occurs during the overlap of a low CS1, a high CS2 and a low WE. A write begins at the latest transition among CS1 goes low,
CS2 going high and WE going low : A write end at the earliest transition among CS1 going high, CS2 going low and WE going high,
tWP is measured from the begining of write to the end of write.
2. tCW is measured from the CS1 going low or CS2 going high to the end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change. tWR(1) applied in case a write ends as CS1 or WE going high tWR(2)
applied in case a write ends as CS2 going to low.
CS2
tCW(2)
WE
Data in
Data Valid
Data out
High-Z
High-Z
tCW(2)
tWR(4)
tWP(1)
tDW
tDH
tAS(3)
tWC
CS2 controlled
VCC
3.0/2.7V1)
0.4V
VDR
CS2
GND
Data Retention Mode
tSDR
tRDR
1. 3.0V for KM68V1000B Family , 2.7V for KM68U1000B Family
CS2
≤0.2V


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