2N5301 datasheet(1/6 Pages) ONSEMI | POWER TRANSISTORS NPN SILICON

Teilenummer	2N5301

Bauteilbeschribung	POWER TRANSISTORS NPN SILICON

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Motorola Bipolar Power Transistor Device Data

High-Power NPN Silicon

Transistors

. . . for use in power amplifier and switching circuits applications.

• High Collector–Emitter Sustaining Voltage —

VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303)

• Low Collector–Emitter Saturation Voltage —

VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc (2N5301, 2N5302)

VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc (2N5303)

• Excellent Safe Operating Area —

200 Watt dc Power Rating to 30 Vdc (2N5303)

• Complements to PNP 2N4398, 2N4399 and 2N5745

*MAXIMUM RATINGS

Rating

Symbol

2N5301

2N5302

2N5303

Unit

Collector–Emitter Voltage

VCEO

40

60

80

Vdc

Collector–Base Voltage

VCB

40

60

80

Vdc

Collector Current — Continuous

IC

30

20

Adc

Base Current

IB

7.5

Adc

Total Device Dissipation @ TC = 25_C

Derate above 25

_C

PD

200

1.14

Watts

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 200

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

θJC

0.875

_C/W

Thermal Resistance, Case to Ambient

θCA

34

_C/W

* Indicates JEDEC Registered Data.

TC

200

0

20

40

60

80

100

120

140

160

180

200

Figure 1. Power Temperature Derating Curve

TEMPERATURE (

°C)

150

100

50

TC

8.0

0

6.0

4.0

2.0

TA

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by 2N5301/D

2N5301

2N5302

2N5303

20 AND 30 AMPERE

POWER TRANSISTORS

NPN SILICON

40 – 60 – 80 VOLTS

200 WATTS

CASE 1–07

TO–204AA

(TO–3)

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