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2N5301 Datenblatt(PDF) 1 Page - ON Semiconductor

Teilenummer 2N5301
Bauteilbeschribung  POWER TRANSISTORS NPN SILICON
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Motorola Bipolar Power Transistor Device Data
High-Power NPN Silicon
Transistors
. . . for use in power amplifier and switching circuits applications.
• High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303)
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc (2N5301, 2N5302)
VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc (2N5303)
• Excellent Safe Operating Area —
200 Watt dc Power Rating to 30 Vdc (2N5303)
• Complements to PNP 2N4398, 2N4399 and 2N5745
*MAXIMUM RATINGS
Rating
Symbol
2N5301
2N5302
2N5303
Unit
Collector–Emitter Voltage
VCEO
40
60
80
Vdc
Collector–Base Voltage
VCB
40
60
80
Vdc
Collector Current — Continuous
IC
30
30
20
Adc
Base Current
IB
7.5
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25
_C
PD
200
1.14
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 200
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
0.875
_C/W
Thermal Resistance, Case to Ambient
θCA
34
_C/W
* Indicates JEDEC Registered Data.
TC
200
0
0
20
40
60
80
100
120
140
160
180
200
Figure 1. Power Temperature Derating Curve
TEMPERATURE (
°C)
150
100
50
TC
8.0
0
6.0
4.0
2.0
TA
TA
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5301/D
© Motorola, Inc. 1995
2N5301
2N5302
2N5303
20 AND 30 AMPERE
POWER TRANSISTORS
NPN SILICON
40 – 60 – 80 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)


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