2N5301 datasheet(3/6 Pages) ONSEMI | POWER TRANSISTORS NPN SILICON

Teilenummer	2N5301

Bauteilbeschribung	POWER TRANSISTORS NPN SILICON

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2N5301 2N5302 2N5303

3

Motorola Bipolar Power Transistor Device Data

SWITCHING TIME EQUIVALENT TEST CIRCUITS

Figure 2. Turn–On time

INPUT PULSE

tr ≤ 20 ns

PW = 10 to 100

µs

DUTY CYCLE = 2.0%

+11 V

– 2.0 V

10

VCC

+ 30 V

3.0

TO

SCOPE

tr ≤ 20 ns

Figure 3. Turn–Off time

INPUT PULSE

tr ≤ 20 ns

PW = 10 to 100

µs

DUTY CYCLE = 2.0%

+11 V

– 9.0 V

10

VCC

+ 30 V

3.0

TO

SCOPE

tr ≤ 20 ns

0

D

VBB = 7.0 V

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.02

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.03 0.05 0.1

0.2 0.3

0.5

1.0

2.0 3.0

5.0

10

20

30

50

100

200 300

2000

500

θJC(t) = r(t) θJC

θJC = 0.875°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) θJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01

SINGLE PULSE

0.1

100

1.0

Figure 5. Active–Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

50

20

10

5.0

2.0

1.0

0.5

0.1

2.0

3.0

5.0

10

20

30

100

Secondary Breakdown Limited

Bonding Wire Limited

Thermal Limitations

Pulse Duty Cycle

≤ 10%

50

0.2

2N5303

TJ = 200°C

2N5301, 5302

100

µs

1.0 ms

5.0 ms

Figure 6. Capacitance versus Voltage

3000

0.5

VR, REVERSE VOLTAGE (VOLTS)

100

5.0 7.0

20

30

50

10

1.0

2.0

3.0

500

300

200

TJ = 25°C

Cib

Cob

TC = 25°C

2N5301

2N5302

2N5303

2000

1000

dc

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