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2N5301 Datenblatt(PDF) 3 Page - ON Semiconductor

Teilenummer 2N5301
Bauteilbeschribung  POWER TRANSISTORS NPN SILICON
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

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2N5301 2N5302 2N5303
3
Motorola Bipolar Power Transistor Device Data
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Figure 2. Turn–On time
INPUT PULSE
tr ≤ 20 ns
PW = 10 to 100
µs
DUTY CYCLE = 2.0%
+11 V
– 2.0 V
10
VCC
+ 30 V
3.0
TO
SCOPE
tr ≤ 20 ns
Figure 3. Turn–Off time
INPUT PULSE
tr ≤ 20 ns
PW = 10 to 100
µs
DUTY CYCLE = 2.0%
+11 V
– 9.0 V
10
VCC
+ 30 V
3.0
TO
SCOPE
tr ≤ 20 ns
0
D
VBB = 7.0 V
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.02
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.03 0.05 0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20
30
50
100
200 300
2000
500
θJC(t) = r(t) θJC
θJC = 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
100
1.0
Figure 5. Active–Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
50
20
10
5.0
2.0
1.0
0.5
0.1
2.0
3.0
5.0
10
20
30
100
Secondary Breakdown Limited
Bonding Wire Limited
Thermal Limitations
Pulse Duty Cycle
≤ 10%
50
0.2
2N5303
TJ = 200°C
2N5301, 5302
100
µs
1.0 ms
5.0 ms
Figure 6. Capacitance versus Voltage
3000
0.5
VR, REVERSE VOLTAGE (VOLTS)
100
5.0 7.0
20
30
50
10
1.0
2.0
3.0
500
300
200
TJ = 25°C
Cib
Cob
TC = 25°C
2N5301
2N5302
2N5303
2000
1000
1000
dc


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