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2N5301 Datenblatt(PDF) 4 Page - ON Semiconductor

Teilenummer 2N5301
Bauteilbeschribung  POWER TRANSISTORS NPN SILICON
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N5301 Datenblatt(HTML) 4 Page - ON Semiconductor

  2N5301 Datasheet HTML 1Page - ON Semiconductor 2N5301 Datasheet HTML 2Page - ON Semiconductor 2N5301 Datasheet HTML 3Page - ON Semiconductor 2N5301 Datasheet HTML 4Page - ON Semiconductor 2N5301 Datasheet HTML 5Page - ON Semiconductor 2N5301 Datasheet HTML 6Page - ON Semiconductor  
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2N5301 2N5302 2N5303
4
Motorola Bipolar Power Transistor Device Data
5.0
0.03
IC, COLLECTOR CURRENT (AMP)
3.0
2.0
0.7
0.5
0.3
0.1
0.05
0.05
0.1
0.2
0.5
2.0 3.0
30
tr @ VCC = 30 V
td @ VOB = 2.0 V
TJ = 25°C
IC/IB = 10
0.07
1.0
Figure 7. Turn–On Time
1.0
0.2
0.3
5.0
10
20
tr @ VCC = 10 V
3.0
0.03
IC, COLLECTOR CURRENT (AMP)
0.7
0.5
0.3
0.1
0.05
0.1
0.5
1.0
3.0
30
tf @ VCC = 30 V
TJ = 25°C
IB1 = IB2
IC/IB = 10
ts′ ≈ ts – 1/8 tf
Figure 8. Turn–Off Time
1.0
0.3
5.0
10
tf @ VCC = 10 V
ts′
300
0.03
Figure 9. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
10
0.05
0.1
0.3
0.5
1.0
3.0
5.0
10
30
100
50
30
20
Figure 10. Collector Saturation Region
2.0
0.01
IB, BASE CURRENT (AMP)
0
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
1.6
1.2
0.8
0.4
IC = 2.0 A
TJ = 25°C
5.0 A
10 A
200
70
TJ = 175°C
25
°C
– 55
°C
VCE = 10 V
VCE = 2.0 V
20 A
108
0
Figure 11. Effects of Base–Emitter Resistance
TJ, JUNCTION TEMPERATURE (°C)
20
40
60
80
100
120
140
160
200
106
105
104
103
102
180
VCE = 30 V
IC = 2 x ICES
IC ≈ ICES
TYPICAL ICES VALUES OBTAINED
FROM FIGURE 13
107
IC = 10 x ICES
2.0
0.03
IC, COLLECTOR CURRENT (AMP)
0.05
0.1
0.3
0.5
1.0
3.0
5.0
10
30
1.6
0.8
0.6
0.4
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
Figure 12. “On” Voltages
1.8
1.4
1.2
1.0
0.2
VBE(on) @ VCE = 2.0 V


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