Datenblatt-Suchmaschine für elektronische Bauteile |
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STB11NB40 Datenblatt(PDF) 2 Page - STMicroelectronics |
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STB11NB40 Datenblatt(HTML) 2 Page - STMicroelectronics |
2 / 11 page STB11NB40/STB11NB40-1 2/11 Table 3. Absolute Maximum Ratings Note: 1. Pulse width limited by safe operating area 2. ISD ≤ 11A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Table 4. Thermal Data Table 5. Avalanche Characteristics Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 400 V VDGR Drain- gate Voltage (RGS = 20 kΩ) 400 V VGS Gate-source Voltage ± 30 V ID Drain Current (cont.) at TC = 25 °C 10.7 A ID Drain Current (cont.) at TC = 100 °C 6.7 A IDM (1) Drain Current (pulsed) 42.8 A Ptot Total Dissipation at TC = 25 °C 125 W Derating Factor 1.0 W°/C dv/dt (2) Storage Temperature 4.5 V/ns Tstg Storage Temperature -65 to 150 °C Tj Max. Operating Junction Temperature 150 °C Symbol Parameter Value Unit Rthj-case Thermal Resistance Junction-case Max 1.0 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) 10.7 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C; ID = IAR; VDD = 50 V) 530 mJ |
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