Datenblatt-Suchmaschine für elektronische Bauteile |
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TPC8010-H Datenblatt(PDF) 1 Page - Toshiba Semiconductor |
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TPC8010-H Datenblatt(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TPC8010-H 2002-03-12 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8010-H DC-DC Converters Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • High speed switching • Small gate charge: Qg = 18 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 12 mΩ (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 11 Drain current Pulse (Note 1) IDP 44 A Drain power dissipation (t = 10 s) (Note 2a) PD 1.9 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.0 W Single pulse avalanche energy (Note 3) EAS 157 mJ Avalanche current IAR 11 A Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.19 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration 8 6 1 2 3 7 5 4 |
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Ähnliche Beschreibung - TPC8010-H |
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