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TPC8010-H Datenblatt(PDF) 1 Page - Toshiba Semiconductor

Teilenummer TPC8010-H
Bauteilbeschribung  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII)
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

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TPC8010-H
2002-03-12
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII)
TPC8010-H
DC-DC Converters
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to small and thin package
• High speed switching
• Small gate charge: Qg = 18 nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 12 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 11 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
11
Drain current
Pulse (Note 1)
IDP
44
A
Drain power dissipation
(t
= 10 s)
(Note 2a)
PD
1.9
W
Drain power dissipation
(t
= 10 s)
(Note 2b)
PD
1.0
W
Single pulse avalanche energy
(Note 3)
EAS
157
mJ
Avalanche current
IAR
11
A
Repetitive avalanche energy
(Note 2a) (Note 4)
EAR
0.19
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
8
6
1
2
3
7
5
4


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