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THNCF008MBA Datenblatt(PDF) 37 Page - Toshiba Semiconductor |
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THNCF008MBA Datenblatt(HTML) 37 Page - Toshiba Semiconductor |
37 / 48 page THNCFxxxMBA/BAI Series 2002-10-20 37/48 Preliminary Attribute Memory Write AC Characteristics SYMBOL PARAMETER MIN MAX TYP UNIT NOTES tCW Write cycle time 250 tW (WE) Write pulse time 150 tSU (A) Address setup time 30 tSU (D-WEH) Data setup time (−WE) 80 tH (D) Data hold time 30 tREC (WE) Write recover time 30 ns Attribute Memory Read Timing −CE −WE DIN −REG An tC (W) tSU(A) tW(WE) tREC(WE) tH(D) tSU(D-WEH) −OE Data in Valid |
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