Datenblatt-Suchmaschine für elektronische Bauteile |
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STGB20NB41LZ Datenblatt(PDF) 2 Page - STMicroelectronics |
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STGB20NB41LZ Datenblatt(HTML) 2 Page - STMicroelectronics |
2 / 9 page STGB20NB41LZ 2/9 ABSOLUTE MAXIMUM RATINGS ( ) Pulse width limited by safe operating area THERMAL DATA ELECTRICAL CHARACTERISTICS (TCASE =25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS =0) CLAMPED V VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage CLAMPED V IC Collector Current (continuous) at TC =25°C 40 A IC Collector Current (continuous) at TC =100°C 20 A ICM ( ) Collector Current (pulsed) 80 A Eas Single Pulse Energy Tc = 25°C700 mJ PTOT Total Dissipation at TC =25°C 200 W Derating Factor 1.33 W/°C ESD ESD (Human Body Model) 8 KV Tstg Storage Temperature – 55 to 175 °C Tj Operating Junction Temperature Rthj-case Thermal Resistance Junction-case Max 0.75 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Symbol Parameter Test Conditions Min. Typ. Max. Unit BV(CES) Clamped Voltage IC=2mA,VGE=0, Tc= - 40°C ÷ 150°C 382 412 442 V BV(ECR) Emitter Collector Break-down Voltage IC=75 mA, Tc=25°C20 28 V BVGE Gate Emitter Break-down Voltage IG=± 2 mA 12 14 16 V ICES Collector cut-off Current (VGE =0) VCE=15 V, VGE=0,TC=150 °C 10 µA VCE=200 V, VGE=0,TC=150°C 100 µA IGES Gate-Emitter Leakage Current (VCE =0) VGE=± 10V,VCE= 0 ± 300 ± 660 ± 1000 µA RGE Gate Emitter Resistance 10 15 30 K Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit VGE(th) Gate Threshold Voltage VCE=VGE,IC= 250µA, Tc=25°C 12.4 V VCE(SAT) Collector-Emitter Saturation Voltage VGE=4.5V, IC=10A, Tc= 25°C VGE=4.5V, IC=20A, Tc= 25°C 1.1 1.3 1.8 2.0 V V |
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