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STGB20NB41LZ Datenblatt(PDF) 2 Page - STMicroelectronics

Teilenummer STGB20NB41LZ
Bauteilbeschribung  N-CHANNEL CLAMPED 20A - DPAK INTERNALLY CLAMPED PowerMESH IGBT
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGB20NB41LZ Datenblatt(HTML) 2 Page - STMicroelectronics

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STGB20NB41LZ
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ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE =25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS =0)
CLAMPED
V
VECR
Emitter-Collector Voltage
20
V
VGE
Gate-Emitter Voltage
CLAMPED
V
IC
Collector Current (continuous) at TC =25°C
40
A
IC
Collector Current (continuous) at TC =100°C
20
A
ICM ( )
Collector Current (pulsed)
80
A
Eas
Single Pulse Energy Tc = 25°C700
mJ
PTOT
Total Dissipation at TC =25°C
200
W
Derating Factor
1.33
W/°C
ESD
ESD (Human Body Model)
8
KV
Tstg
Storage Temperature
– 55 to 175
°C
Tj
Operating Junction Temperature
Rthj-case
Thermal Resistance Junction-case Max
0.75
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV(CES)
Clamped Voltage
IC=2mA,VGE=0,
Tc= - 40°C
÷ 150°C
382
412
442
V
BV(ECR)
Emitter Collector Break-down
Voltage
IC=75 mA, Tc=25°C20
28
V
BVGE
Gate Emitter Break-down
Voltage
IG=± 2 mA
12
14
16
V
ICES
Collector cut-off Current
(VGE =0)
VCE=15 V, VGE=0,TC=150 °C
10
µA
VCE=200 V, VGE=0,TC=150°C
100
µA
IGES
Gate-Emitter Leakage
Current (VCE =0)
VGE=± 10V,VCE= 0
± 300
± 660
±
1000
µA
RGE
Gate Emitter Resistance
10
15
30
K
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGE(th)
Gate Threshold Voltage
VCE=VGE,IC= 250µA, Tc=25°C
12.4
V
VCE(SAT)
Collector-Emitter Saturation
Voltage
VGE=4.5V, IC=10A, Tc= 25°C
VGE=4.5V, IC=20A, Tc= 25°C
1.1
1.3
1.8
2.0
V
V


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