Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Toshiba Semiconductor |
2SK170
|
218Kb / 4P |
FET, Silicon N Channel Junction Type(for Low Noise Audio Amplifier)
|
Samsung semiconductor |
KSK117
|
121Kb / 4P |
N-CHANNEL JUNCTION FET (LOW FREQUENCY LOW NOISE AMP.)
|
Toshiba Semiconductor |
2SK117
|
579Kb / 4P |
Silicon N Channel Junction Type Low Noise Audio Amplifier Applications
|
2SK170
|
644Kb / 5P |
Silicon N Channel Junction Type Low Noise Audio Amplifier Applications
|
2SK184
|
580Kb / 4P |
Silicon N Channel Junction Type Low Noise Audio Amplifier Applications
|
Sanyo Semicon Device |
2SK2394
|
398Kb / 6P |
N-Channel Junction Silicon FET Low-Noise HF Amplifi er Applications
|
Toshiba Semiconductor |
2SK880
|
584Kb / 4P |
Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications
|
2SK209
|
553Kb / 4P |
Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications
|
2SK3320
|
589Kb / 5P |
Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|
2SK369
|
754Kb / 5P |
Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|