STB60NF10T4 datasheet(1/10 Pages) STMICROELECTRONICS

Teilenummer	STB60NF10T4

Bauteilbeschribung	N-CHANNEL 100V - 0.019ohm - 80A D2PAK/TO-220 STripFET II POWER MOSFET

Download	10 Pages

Scroll/Zoom	100%

Hersteller	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

1 / 10 page

1/10

May 2005

STB60NF10

STP60NF10

N-CHANNEL 100V - 0.019

Ω - 80A D²PAK/TO-220

STripFET™ II POWER MOSFET

Rev. 2.0

Figure 1:Package

Table 1: General Features

■

TYPICAL RDS(on) = 0.019 Ω

■

EXTREMELY HIGHL dv/dt CAPABILITY

■

100% AVALANCHE TESTED

■

SURFACE-MOUNTING D²PAK (TO-263)

POWER PACKAGE IN TAPE & REEL

(SUFFIX “T4")

DESCRIPTION

This MOSFET series realized with STMicroelec-

tronics unique STripFET™ process has specifical-

ly been designed to minimize input capacitance

and gate charge. It is therefore suitable as primary

switch in advanced high-efficiency, high-frequency

isolated DC-DC converters for Telecom and Com-

puter applications. It is also intended for any appli-

cations with low gate drive requirements.

APPLICATIONS

■

HIGH EFFICIENCY DC/DC CONVERTERS,

INDUSTRIAL, AND LIGHTING EQUIPMENT.

■

MOTOR CONTROL

TYPE

VDSS

RDS(on)

ID

STB60NF10

STP60NF10

100 V

< 0.023

Ω

< 0.023

Ω

80 A

1

2

3

TO-220

1

3

D2PAK

TO-263

(Suffix “T4”)

Figure 2: Internal Schematic Diagram

Table 2: Ordering Information

Table 3:ABSOLUTE MAXIMUM RATINGS

(

•) Pulse width limited by safe operating area.

(**) Current Limited by Package

(1) ISD ≤80A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(2) Starting Tj = 25 oC, ID = 40A, VDD = 30V

SALES TYPE

MARKING

PACKAGE

PACKAGING

STB60NF10T4

STP60NF10

B60NF10

P60NF10

TO-263

TO-220

TAPE & REEL

TUBE

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

100

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

100

V

VGS

Gate- source Voltage

± 20

V

ID(*)

Drain Current (continuous) at TC = 25°C

80

A

ID

Drain Current (continuous) at TC = 100°C

66

A

IDM(•)

Drain Current (pulsed)

320

A

Ptot

Total Dissipation at TC = 25°C

300

W

Derating Factor

2

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

16

V/ns

EAS (2)

Single Pulse Avalanche Energy

485

mJ

Tstg

Storage Temperature

-55 to 175

°C

Ähnliche Beschreibung - STB60NF10T4

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
STMicroelectronics	STB60NF10	370Kb / 15P	N-channel 100V - 0.019廓 - 80A - TO-220 - D2PAK - I2PAK STripFET??II Power MOSFET
	STP80NF55L-08	320Kb / 8P	N-CHANNEL 55V - 0.0065ohm - 80A - TO-220/D2PAK STripFET??II POWER MOSFET
	STB80NF10	317Kb / 14P	N-channel 100V - 0.012OHM - 80A - TO-220 / D2PAK Low gate charge STRIPFET TM II Power MOSFET
	STB85NF55L	370Kb / 10P	N-CHANNEL 55V - 0.0060 ohm - 80A D2PAK/TO-220 STripFET??II POWER MOSFET
	STP80NF03L-04-1	360Kb / 11P	N-CHANNEL 30V - 0.0035ohm - 80A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET
	STB85NF55	376Kb / 10P	N-CHANNEL 55V - 0.0062 ohm - 80A D2PAK/TO-220 STripFET??II POWER MOSFET
	STB140NF55	280Kb / 11P	N-CHANNEL 55V - 0.0065 ohm - 80A TO-220/D2PAK STripFET II POWER MOSFET
	STP80NF06	314Kb / 14P	N-channel 60V - 0.0065 - 80A TO-220/D2PAK/TO-247 STripFET II Power MOSFET
	STP80NF06	303Kb / 14P	N-CHANNEL 60V - 0.0065OHM - 80A TO-220/D2PAK/TO-247 STripFET II POWER MOSFET
New Jersey Semi-Conduct...	STP75NF75FP	98Kb / 3P	N-channel 75V - 0.0095Q- 80A - TO-220 - TO-220FP - D2PAK STripFET??II Power MOSFET

More results

STB60NF10T4 Datenblatt(PDF) 1 Page - STMicroelectronics

STB60NF10T4 Datenblatt(HTML) 1 Page - STMicroelectronics

Ähnliche Teilenummer - STB60NF10T4

Ähnliche Beschreibung - STB60NF10T4

Html Pages

1 2 3 4 5 6 7 8 9 10

Datenblatt Download

Link URL