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SI5517DU Datenblatt(PDF) 2 Page - Vishay Siliconix |
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SI5517DU Datenblatt(HTML) 2 Page - Vishay Siliconix |
2 / 4 page 2 Vishay Siliconix SPICE Device Model Si5517DU www.vishay.com Document Number: 74130 S-52018 ⎯Rev. A, 03-Oct-05 SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static VDS = VGS, ID = 250 μA N-Ch 0.50 Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 μA P-Ch 0.80 VDS < 5 V, VGS = 4.5 V N-Ch 117 On-State Drain Current a ID(on) VDS < −5 V, VGS = −4.5 V P-Ch 60 A VGS = 4.5 V, ID = 4.4 A N-Ch 0.032 0.032 VGS = −4.5 V, ID = −3.3 A P-Ch 0.063 0.060 VGS = 2.5 V, ID = 4.1 A N-Ch 0.038 0.037 VGS = −2.5 V, ID = −2.8 A P-Ch 0.082 0.083 VGS = 1.8 V, ID = 1.8 A N-Ch 0.046 0.046 Drain-Source On-State Resistance a rDS(on) VGS = −1.8 V, ID = −0.76 A P-Ch 0.107 0.108 Ω VDS = 10 V, ID = 4.4 A N-Ch 23 22 Forward Transconductance a gfs VDS = −10 V, ID = −3.3 A P-Ch 11 9 S IS = 1.2 A N-Ch 0.72 0.80 Diode Forward Voltage a VSD IS = −1A P-Ch 0.78 - 080 V Dynamic b N-Ch 605 520 Input Capacitance Ciss P-Ch 589 455 N-Ch 96 100 Output Capacitance Coss P-Ch 103 105 N-Ch 62 60 Reverse Transfer Capacitance Crss N-Channel VDS = 10 V, VGS = 0 V, f = 1 MHz P-Channel VDS = −10 V, VGS = 0 V, f = 1 MHz P-Ch 57 65 pF VDS = 10 V, VGS = 8 V, ID = 4.4 A N-Ch 8.1 10.5 VDS = − 10 V, VGS = −8 V, ID = −4.6 A P-Ch 8.4 9.1 N-Ch 5 6 Total Gate Charge Qg P-Ch 5 5.5 N-Ch 0.91 0.91 Gate-Source Charge Qgs P-Ch 0.75 0.75 N-Ch 0.70 0.70 Gate-Source Charge Qgs N-Channel VDS = 10 V, VGS = 4.5 V, ID = 4.4 A P-Channel VDS = −10 V, VGS = −4.5 V, ID = −1.8 A P-Ch 1.5 1.5 nC Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. |
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