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PHE13005X Datenblatt(PDF) 4 Page - WeEn Semiconductors |
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PHE13005X Datenblatt(HTML) 4 Page - WeEn Semiconductors |
4 / 14 page WeEn Semiconductors PHE13005X Silicon diffused power transistor PHE13005X Product data sheet All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 26 April 2018 4 / 13 Pder(%) = Ptot Ptot(25°C) ×100% Fig. 4. Normalized total power dissipation as a function of heatsink temperature Th ≤ 25 °C Mounted with heatsink compound and (30 ± 5) N force on the center of the envelope (1) Ptot maximum and Ptot peak maximum lines (2) Second breakdown limits (3) Region of permissible DC operation (4) Extension of operating region for repetitive pulse operation (5) Extension of operating region during turn-on in single transistor converters provided that RBE ≤ 100 Ω and tp ≤ 0.6 μs. Fig. 3. Forward bias safe operating area |
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