SI7116DN datasheet(2/5 Pages) VISHAY

Teilenummer	SI7116DN

Bauteilbeschribung	N-Channel 40-V (D-S) Fast Switching MOSFET

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Hersteller	VISHAY [Vishay Siliconix]

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Si7116DN

Vishay Siliconix

www.vishay.com

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Document Number: 73139

S-51412—Rev. C, 01-Aug-05

MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

1.5

2.5

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 40 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 40 V, VGS = 0 V, TJ = 55_C

5

mA

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

40

A

Drain-Source On-State Resistancea

rDS(on)

VGS = 10 V, ID = 16.4 A

0.0065

0.0078

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 14.5 A

0.0083

0.010

W

Forward Transconductancea

gfs

VDS = 15 V, ID = 16.4 A

68

S

Diode Forward Voltagea

VSD

IS = 3.2 A, VGS = 0 V

0.8

1.2

V

Dynamicb

Total Gate Charge

Qg

15

23

Gate-Source Charge

Qgs

VDS = 20 V, VGS = 4.5 V, ID = 16.4 A

6.7

nC

Gate-Drain Charge

Qgd

VDS

20 V, VGS

4.5 V, ID

16.4 A

5.1

nC

Gate-Resistance

Rg

f = 1 MHz

0.7

1.4

2.1

W

Turn-On Delay Time

td(on)

10

15

Rise Time

tr

VDD = 20 V, RL = 20 W

10

15

Turn-Off Delay Time

td(off)

VDD = 20 V, RL = 20 W

ID ^ 1 A, VGEN = 10 V, Rg = 6 W

36

55

ns

Fall Time

tf

10

15

Source-Drain Reverse Recovery Time

trr

IF = 3.2 A, di/dt = 100 A/ms

30

60

Body Diode Reverse Recovery Charge

Qrr

IF = 3.2 A, di/dt = 100 A/ms

26

52

nc

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

10

20

30

40

50

60

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0

10

20

30

40

50

60

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 10 thru 4 V

25

_C

TC = 125_C

–55

_C

3 V

Output Characteristics

Transfer Characteristics

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

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