Datenblatt-Suchmaschine für elektronische Bauteile |
|
STD9N10 Datenblatt(PDF) 4 Page - STMicroelectronics |
|
STD9N10 Datenblatt(HTML) 4 Page - STMicroelectronics |
4 / 12 page STD9N10/STD9N10-1 4/12 Table 11. Source Drain Diode Note: 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Figure 3. Safe Operating Area Figure 4. Thermal Impedance Figure 5. Derating Curve Figure 6. Output Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 9 A ISDM (1) Source-drain Current (pulsed) 36 A VSD (2) Forward On Voltage ISD = 9 A; VGS = 0 1.5 V trr Reverse Recovery Time ISD = 9 A; di/dt = 100 A/µs VDD = 20 V; Tj = 150 °C (see test circuit, Figure 24) 80 ns Qrr Reverse RecoveryCharge 0.2 µC IRRAM Reverse RecoveryCurrent 5 A |
Ähnliche Teilenummer - STD9N10 |
|
Ähnliche Beschreibung - STD9N10 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |