Datenblatt-Suchmaschine für elektronische Bauteile |
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MC10SX1130 Datenblatt(PDF) 7 Page - ON Semiconductor |
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MC10SX1130 Datenblatt(HTML) 7 Page - ON Semiconductor |
7 / 8 page 7 MOTOROLA High Performance Frequency Control Products — BR1334 Modern plastic package assembly utilizes gold wire bonded to aluminum bonding pads throughout the electronics industry. As the temperature of the silicon (junction temperature) increases, an intermetallic compound forms between the gold and aluminum interface. This intermetallic formation results in a significant increase in the impedance of the wire bond and can lead to performance failure of the affected pin. With this relationship between intermetallic formation and junction temperature established, it is incumbent on the designer to ensure that the junction temperature for which a device will operate is consistent with the long term reliability goals of the system. Reliability studies were performed at elevated ambient temperatures (125 °C) from which an arrhenius equation, relating junction temperature to bond failure, was established. The application of this equation yields the table of Figure 3. This table relates the junction temperature of a device in a plastic package to the continuous operating time before 0.1% bond failure (1 failure per 1000 bonds) The MC10SX1130 device is designed with chip power levels that permit acceptable reliability levels, in most systems, under the conventional 500 lfpm (2.5m/s) airflow. T = 6.376 × 10 –9 e 11554.267 273.15 + TJ Where: T = Time to 0.1% bond failure Junction Temp. ( °C) Time (Hrs.) Time (yrs.) 80 1,032,200 117.8 90 419,300 47.9 100 178,700 20.4 110 79,600 9.1 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 Figure 3. Tj vs Time to 0.1% Bond Failure |
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