Datenblatt-Suchmaschine für elektronische Bauteile |
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SI6993DQ-T1 Datenblatt(PDF) 4 Page - Vishay Siliconix |
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SI6993DQ-T1 Datenblatt(HTML) 4 Page - Vishay Siliconix |
4 / 5 page Si6993DQ Vishay Siliconix New Product www.vishay.com 4 Document Number: 72369 S-31912—Rev. A, 15-Sep-03 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 40 80 20 Single Pulse Power, Junction-to-Ambient Time (sec) 60 10-3 10-2 1 10 600 10-1 10-4 100 -0.4 -0.2 0.0 0.2 0.4 0.6 -50 -25 0 25 50 75 100 125 150 ID = 250 mA 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Threshold Voltage TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 124_C/W 3. TJM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 0.1 10 1 0.01 0.001 100 Safe Operating Area, Junction-to-Case VDS - Drain-to-Source Voltage (V) 100 1 0.1 1 10 100 0.01 10 1 ms 0.1 Limited by rDS(on) TC = 25_C Single Pulse 10 ms 100 ms dc 1 s 10 s |
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