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ISL59444IB-T7 Datenblatt(PDF) 7 Page - Intersil Corporation

Teilenummer ISL59444IB-T7
Bauteilbeschribung  1GHz, 4 x 1 Multiplexing Amplifier with Synchronous Controls
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Hersteller  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

ISL59444IB-T7 Datenblatt(HTML) 7 Page - Intersil Corporation

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7
FN7451.1
September 21, 2005
FIGURE 19. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 20. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
Pin Descriptions
PIN NUMBER
PIN NAME
EQUIVALENT
CIRCUIT
DESCRIPTION
1
IN0
Circuit 1
Input for channel 0
2, 6, 8
NIC
Not Internally Connected; it is recommended this pin be tied to ground to minimize
crosstalk.
3
IN1
Circuit 1
Input for channel 1
4
GND
Circuit 4
Ground pin
5
IN2
Circuit 1
Input for channel 2
7
IN3
Circuit 1
Input for channel 3
9
V -
Circuit 4
Negative Power Supply
10
LE1
Circuit 2
Synchronized channel switching: When LE1 is low, the master control latch loads the
next switching address. The Mux Amp is configured for this address when LE2 goes low.
Synchronized operation results when LE2 is the inverse of LE1. Channel selection is
asynchronous (changes with any control signal change) if both LE1 and LE2 are both
low.
11
LE2
Circuit 2
Synchronized channel switching: When LE2 is low, the newly selected channel, stored
in the master latch via LE1 is selected. Synchronized operation results when LE2 is the
inverse of LE1. Channel selection is asynchronous (changes with any control signal
change) if both LE1 and LE2 are both low.
12
OUT
Circuit 3
Output
13
HIZ
Circuit 2
Output disable (active high); there are internal pull-down resistors, so the device will be
active with no connection; "HI" puts the output in high impedance state.
14
S1
Circuit 2
Channel selection pin MSB (binary logic code)
15
S0
Circuit 2
Channel selection pin LSB (binary logic code)
16
V+
Circuit 4
Positive power supply
Typical Performance Curves VS = ±5V, RL = 500Ω to GND, TA = 25°C, unless otherwise specified. (Continued)
1.250W
θ
JA =8
0°C
/W
SO
16
(0.1
50
”)
1.4
1.2
1
0.8
0.6
0.2
0
0
25
50
75
100
150
AMBIENT TEMPERATURE (°C)
125
85
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
0.4
θ
JA =
11
0°C
/W
SO
16
(0.1
50
”)
1
0.9
0.8
0.6
0.4
0.1
0
0
25
50
75
100
150
AMBIENT TEMPERATURE (°C)
125
85
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
0.2
0.7
0.3
0.5
909mW
ISL59444


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