Datenblatt-Suchmaschine für elektronische Bauteile |
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FDS6673AZ Datenblatt(PDF) 3 Page - Fairchild Semiconductor |
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FDS6673AZ Datenblatt(HTML) 3 Page - Fairchild Semiconductor |
3 / 5 page 3 www.fairchildsemi.com FDS6673AZ Rev. C(W) Typical Characteristics 0 20 40 60 80 0 0.5 1 1.5 2 -V DS, DRAIN TO SOURCE VOLTAGE (V) V GS = -10V -3.0V -3.5V -6.0V -4.5V -4.0V 0.6 1 1.4 1.8 2.2 2.6 3 3.4 3.8 020 40 6080 -I D, DRAIN CURRENT (A) V GS = - 3.0V -6.0V -4.5V -10V -5.0V -4.0V -3.5V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 -50 -25 0 25 50 75 100 125 150 175 T J, JUNCTION TEMPERATURE (°C) I D = -14.5A V GS = -10V 0.00 0.01 0.01 0.02 0.02 0.02 24 68 10 -V GS, GATE TO SOURCE VOLTAGE (V) I D = -7.3A T A = 125 oC T A = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 20 40 60 80 1.5 2 2.5 3 3.5 4 -V GS, GATE TO SOURCE VOLTAGE (V) T A = -55° C 25 °C 125 °·C V DS = -5V 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 -V SD, BODY DIODE FORWARD VOLTAGE (V) V GS = 0V T A = 125°C 25 °C -55 °C Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
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