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FDS8870_NL Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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FDS8870_NL Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 12 page April 2005 ©2005 Fairchild Semiconductor Corporation FDS8870 Rev. A3 www.fairchildsemi.com 1 FDS8870 N-Channel PowerTrench® MOSFET 30V, 18A, 4.2m Ω Features rDS(ON) = 4.2mΩ, VGS = 10V, ID = 18A rDS(ON) = 4.9mΩ, VGS = 4.5V, ID = 17A High performance trench technology for extremely low rDS(ON) Low gate charge High power and current handling capability Applications DC/DC converters General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. SO-8 Branding Dash 1 5 2 3 4 4 3 2 1 5 6 7 8 |
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