Datenblatt-Suchmaschine für elektronische Bauteile |
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FDZ7064AS Datenblatt(PDF) 3 Page - Fairchild Semiconductor |
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FDZ7064AS Datenblatt(HTML) 3 Page - Fairchild Semiconductor |
3 / 7 page 3 www.fairchildsemi.com FDZ7064AS Rev. A Typical Characteristics 0 10 20 30 40 50 60 00.25 0.5 0.75 1 VDS, DRAIN-SOURCE VOLTAGE (V) 3.0V 3.5V 2.5V VGS=10.0V 6.0V 4.5V 0.75 1 1.25 1.5 1.75 2 2.25 010 20 30 4050 60 ID, DRAIN CURRENT (A) VGS = 3.0V 3.5V 4.0V 4.5V 6.0V 10.0V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1 1.2 1.4 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE ( °C) ID = 13.5A VGS = 10V 0.0025 0.005 0.0075 0.01 0.0125 0.015 0.0175 0.02 24 68 10 VGS, GATE TO SOURCE VOLTAGE (V) ID =6.8A TA = 125 °C TA = 25 °C Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 10 20 30 40 50 60 11.5 22.5 3 VGS, GATE TO SOURCE VOLTAGE (V) TA = 125 °C 25 °C -55 °C VDS = 5V 0.0001 0.001 0.01 0.1 1 10 100 00.2 0.40.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125 °C 25 °C -55 °C VGS = 0V Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
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