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IKW30N60T Datenblatt(PDF) 3 Page - Infineon Technologies AG

Teilenummer IKW30N60T
Bauteilbeschribung  Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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Hersteller  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

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IKW30N60T
TrenchStop Series
q
Power Semiconductors
3
Rev. 2.1 Dev-04
Switching Characteristic, Inductive Load, at Tj=25
°C
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
-
23
-
Rise time
tr
-
21
-
Turn-off delay time
td(off)
-
254
-
Fall time
tf
-
46
-
ns
Turn-on energy
Eon
-
0.69
-
Turn-off energy
Eoff
-
0.77
-
Total switching energy
Ets
Tj=25
°C,
VCC=400V,IC=30A,
VGE=0/15V,
RG=10.6
Ω,
Lσ
1) =136nH,
Cσ
1) =39pF
Energy losses include
“tail” and diode
reverse recovery.
-
1.46
-
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
-
143
-
ns
Diode reverse recovery charge
Qrr
-
0.92
-
µC
Diode peak reverse recovery current
Irrm
-
16.3
-
A
Diode peak rate of fall of reverse
recovery current during tb
dirr/dt
Tj=25
°C,
VR=400V, IF=30A,
diF/dt=910A/
µs
-
603
-
A/
µs
Switching Characteristic, Inductive Load, at Tj=175
°C
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
-
24
-
Rise time
tr
-
26
-
Turn-off delay time
td(off)
-
292
-
Fall time
tf
-
90
-
ns
Turn-on energy
Eon
-
1.0
-
Turn-off energy
Eoff
-
1.1
-
Total switching energy
Ets
Tj=175
°C,
VCC=400V,IC=30A,
VGE=0/15V,
RG= 10.6
Lσ
1) =136nH,
Cσ
1) =39pF
Energy losses include
“tail” and diode
reverse recovery.
-
2.1
-
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
-
225
-
ns
Diode reverse recovery charge
Qrr
-
2.39
-
µC
Diode peak reverse recovery current
Irrm
-
22.3
-
A
Diode peak rate of fall of reverse
recovery current during tb
dirr/dt
Tj=175
°C
VR=400V, IF=30A,
diF/dt=910A/
µs
-
310
-
A/
µs
1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.


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