Datenblatt-Suchmaschine für elektronische Bauteile |
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BA545AL Datenblatt(PDF) 5 Page - NXP Semiconductors |
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BA545AL Datenblatt(HTML) 5 Page - NXP Semiconductors |
5 / 8 page 1999 May 28 5 Philips Semiconductors Product specification Low-leakage diode BAS45AL VR = 125 V. Fig.5 Reverse current as a function of junction temperature. handbook, halfpage 10 4 10 3 10 2 10 10 1 150 50 0 MBD456 100 1 I R (nA) T ( C) o j typ max Fig.6 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj =25 °C. handbook, halfpage 010 20 15 5 3 2 0 1 MBG524 VR (V) Cd (pF) handbook, full pagewidth t rr (1) I F t output signal t r t t p 10% 90% VR input signal V = V I x R RF S R = 50 S Ω IF D.U.T. R = 50 i Ω SAMPLING OSCILLOSCOPE MGA881 Fig.7 Reverse recovery time test circuit and waveforms. |
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