This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Publication# 26503

Rev: B Amendment/+2

Issue Date: June 10, 2005

Refer to AMD’s Website (www.amd.com) for the latest information.

Am29DL642G

128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only

Simultaneous Read/Write Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Two 64 Megabit (Am29DL640G) in a single 63-ball 12

x 11 mm Fine-pitch BGA package (features are

described herein for each internal Am29DL640G)

■ Two Chip Enable inputs

— Two CE# inputs to control selection of each internal

Am29DL640G devices

■ Single power supply operation

— 2.7 to 3.6 volt read, erase, and program operations

■ Simultaneous Read/Write operations

— Data can be continuously read from one bank while

executing erase/program functions in another bank.

— Zero latency between read and write operations

— Read may occur in any of the three banks not being

written or erased.

— Four banks may be grouped by customer to achieve

desired bank divisions.

■ Boot Sectors

— Top and bottom boot sectors in the same device

— Any combination of sectors can be erased

Silicon) Sector: Extra 256 Byte sector

— Factory locked and identifiable: 16 bytes available for

secure, random factory Electronic Serial Number;

verifiable as factory locked through autoselect

function. ExpressFlash option allows entire sector to

be available for factory-secured data

— Customer lockable: One-time programmable only.

Once locked, data cannot be changed

■ High performance

— 70 or 90 ns access time

■ Manufactured on 0.17 µm process technology

■ CFI (Common Flash Interface) compliant

— Provides device-specific information to the system,

allowing host software to easily reconfigure for

different Flash devices

■ Ultra low power consumption (typical values at 3.0 V,

5 MHz) for the part

— 10 mA typical active read current

— 15 mA typical erase/program current

— 400 nA typical standby mode current

■ Flexible sector architecture

— Two hundred fifty-six 32 Kword sectors

■ Compatibility with JEDEC standards

— Except for the added CE2#, the Fine-pitch BGA is

pinout and software compatible with single-power

supply Flash

— Superior inadvertent write protection

■ Minimum 1 million erase cycle guarantee per sector

■ 63-ball Fine-pitch BGA Package

SOFTWARE FEATURES

■ Data Management Software (DMS)

— AMD-supplied software manages data programming,

enabling EEPROM emulation

— Eases historical sector erase flash limitations

■ Supports Common Flash Memory Interface (CFI)

■ Erase Suspend/Erase Resume

— Suspends erase operations to allow reading from

other sectors in same bank

■ Data# Polling and Toggle Bits

— Provides a software method of detecting the status of

program or erase cycles

■ Unlock Bypass Program command

— Reduces overall programming time when issuing

multiple program command sequences

HARDWARE FEATURES

■ Ready/Busy# output (RY/BY#)

— Hardware method for detecting program or erase

cycle completion

■ Hardware reset pin (RESET#)

— Hardware method of resetting the internal state

machine to the read mode

■ WP#/ACC input pin

— Write protect (WP#) function protects sectors 0, 1,

140, and 141, regardless of sector protect status

— Acceleration (ACC) function accelerates program

timing

■ Sector protection

— Hardware method of locking a sector, either

in-system or using programming equipment, to

prevent any program or erase operation within that

sector

— Temporary Sector Unprotect allows changing data in

protected sectors in-system

This product has been retired and is not recommended for designs. For new and current designs, S29PL127J supersedes AM29DL642G as the factory-recommended migration path.

Please refer to the S29PL127J datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.