BTF3050TE datasheet(25/48 Pages) INFINEON

Teilenummer	BTF3050TE

Bauteilbeschribung	Smart Low-Side Power Switch

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Hersteller	INFINEON [Infineon Technologies AG]

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Datasheet

25

Rev. 1.1, 2018-08-28

HITFET - BTF3050TE

Smart Low-Side Power Switch

Electrical Characteristics

9

Electrical Characteristics

Note: Characteristics show the deviation of parameter at given input voltage and junction temperature.

Typical values show the typical parameters expected from manufacturing and in typical application

condition.

All voltages and currents naming and polarity in accordance to

Figure 3 “Naming Definition of electrical parameters” on Page 6

9.1

Power Stage

Please see Chapter “Power Stage” on Page 12 for parameter description and further details.

Table 5

Electrical Characteristics: Power Stage

T

J = -40 °C to +150 °C, VDD = 3.0 V to 5.5 V, VBAT = 8 V to 18 V, all voltages with respect to ground, positive current

flowing into pin (unless otherwise specified)

Pos. Parameter

Symbol

Limit Values

Unit Note /

Test Condition

Min. Typ. Max.

Power Stage - Static Characteristics

9.1.1 On-State resistance

RDS(ON)

–40

–

m

Ω IL = IL(NOM);

V

DD = 5V;

T

j = 25 °C

–

80

100

m

Ω IL = IL(NOM);

V

DD = 5V;

T

j = 150 °C

9.1.2 Nominal load current

I

L(NOM)

–3.0

–

A

1)

T

J < 150 °C;

V

DD = 5 V;

9.1.3 OFF state load current, Output leakage

current

I

L(OFF)

––2

μA

2)

V

OUT = VBAT= 13.5 V;

V

IN = 0 V;

V

DD = 5 V;

T

J ≤ 85 °C

OFF state load current, Output leakage

current

I

L(OFF)

––1

μA

V

OUT = VBAT = 13.5 V;

V

IN = 0 V;

V

DD = 5 V;

T

J = 25 °C

OFF state load current, Output leakage

current

I

L(OFF)

–1.5

4

μA

V

OUT = VBAT;

V

IN = 0 V;

V

DD = 5 V;

T

J = 150 °C

Reverse Diode

9.1.4 Reverse diode forward voltage

-V

DS

–1.0

–

V

T

J = -40°C

ID = - IL(NOM); VIN = 0 V

–0.8

–

T

J = 25°C

ID = - IL(NOM); VIN = 0 V

–0.7

1.0

T

J = 150°C

ID = - IL(NOM); VIN = 0 V

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