Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

MJ13333 Datenblatt(PDF) 6 Page - ON Semiconductor

Teilenummer MJ13333
Bauteilbeschribung  NPN SILICON POWER TRANSISTORS
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJ13333 Datenblatt(HTML) 6 Page - ON Semiconductor

  MJ13333 Datasheet HTML 1Page - ON Semiconductor MJ13333 Datasheet HTML 2Page - ON Semiconductor MJ13333 Datasheet HTML 3Page - ON Semiconductor MJ13333 Datasheet HTML 4Page - ON Semiconductor MJ13333 Datasheet HTML 5Page - ON Semiconductor MJ13333 Datasheet HTML 6Page - ON Semiconductor MJ13333 Datasheet HTML 7Page - ON Semiconductor MJ13333 Datasheet HTML 8Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 6 / 8 page
background image
MJ13333
6
Motorola Bipolar Power Transistor Device Data
0.005
Figure 12. Forward Bias Safe Operating Area
6
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
50
50
10
2
1
5
0.2
450
20
100
Figure 13. RBSOA, Reverse Bias Switching
Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0
100
200
16
8.0
20
300
IC/IB ≥ 5
VBE(off) = 5 V
TJ = 100°C
0.05
200
350
12
4.0
0.1
0.02
400
500
dc
1 ms
10
µs
100
µs
400 500
600
600
20
0.01
MJ13333
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 12 is based on TC = 25_C. TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 12 may be found at any case tem-
perature by using the appropriate curve on Figure 14.
TJ(pk) may be calculated from the data in Figure 11. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations im-
posed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current condition allowable dur-
ing reverse biased turn–off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 13 gives the complete RBSOA
characteristics.
0
Figure 14. Power Derating
TC, CASE TEMPERATURE (°C)
0
40
80
80
40
100
120
160
200
60
20
THERMAL
DERATING
FORWARD BIAS
SECOND BREAKDOWN
DERATING


Ähnliche Teilenummer - MJ13333

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
Motorola, Inc
MJ13333 MOTOROLA-MJ13333 Datasheet
278Kb / 8P
   20 AMPERE NPN SILICON POWER TRANSISTORS 400-500 VOLTS 175 WATTS
logo
Inchange Semiconductor ...
MJ13333 ISC-MJ13333 Datasheet
278Kb / 2P
   isc Silicon NPN Power Transistor
logo
New Jersey Semi-Conduct...
MJ13333 NJSEMI-MJ13333 Datasheet
91Kb / 2P
   Silicon NPN Power Transistor
logo
Mospec Semiconductor
MJ13333 MOSPEC-MJ13333 Datasheet
83Kb / 2P
   SWITCHMODE SERIES NPN SILICON TRANSISTORS
More results

Ähnliche Beschreibung - MJ13333

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
Motorola, Inc
MJ8504 MOTOROLA-MJ8504 Datasheet
416Kb / 6P
   NPN SILICON POWER TRANSISTORS
logo
Texas Instruments
TIPL751 TI-TIPL751 Datasheet
224Kb / 7P
[Old version datasheet]   NPN SILICON POWER TRANSISTORS
logo
Transys Electronics
TIPL765 TRSYS-TIPL765 Datasheet
805Kb / 6P
   NPN SILICON POWER TRANSISTORS
logo
Siemens Semiconductor G...
BU208 SIEMENS-BU208 Datasheet
100Kb / 4P
   NPN SILICON POWER TRANSISTORS
BUX80 SIEMENS-BUX80 Datasheet
117Kb / 5P
   NPN SILICON POWER TRANSISTORS
BUX84 SIEMENS-BUX84 Datasheet
106Kb / 5P
   NPN SILICON POWER TRANSISTORS
logo
Boca Semiconductor Corp...
2N6676 BOCA-2N6676 Datasheet
144Kb / 3P
   NPN SILICON POWER TRANSISTORS
logo
ON Semiconductor
TIP47 ONSEMI-TIP47 Datasheet
199Kb / 6P
   POWER TRANSISTORS NPN SILICON
1995 REV 1
2N5301 ONSEMI-2N5301 Datasheet
251Kb / 6P
   POWER TRANSISTORS NPN SILICON
1995
2N5655 ONSEMI-2N5655 Datasheet
176Kb / 4P
   POWER TRANSISTORS NPN SILICON
April, 2002 ??Rev. 7
2N6338 ONSEMI-2N6338 Datasheet
155Kb / 4P
   POWER TRANSISTORS NPN SILICON
May, 2001 ??Rev. 10
More results


Html Pages

1 2 3 4 5 6 7 8


Datenblatt Download

Go To PDF Page


Link URL




Privatsphäre und Datenschutz
ALLDATASHEETDE.COM
War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com