Datenblatt-Suchmaschine für elektronische Bauteile |
|
MJ13333 Datenblatt(PDF) 6 Page - ON Semiconductor |
|
MJ13333 Datenblatt(HTML) 6 Page - ON Semiconductor |
6 / 8 page MJ13333 6 Motorola Bipolar Power Transistor Device Data 0.005 Figure 12. Forward Bias Safe Operating Area 6 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 10 50 50 10 2 1 5 0.2 450 20 100 Figure 13. RBSOA, Reverse Bias Switching Safe Operating Area VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 0 100 200 16 8.0 20 300 IC/IB ≥ 5 VBE(off) = 5 V TJ = 100°C 0.05 200 350 12 4.0 0.1 0.02 400 500 dc 1 ms 10 µs 100 µs 400 500 600 600 20 0.01 MJ13333 BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMIT SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor average junction temperature and second break- down. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipa- tion than the curves indicate. The data of Figure 12 is based on TC = 25_C. TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not der- ate the same as thermal limitations. Allowable current at the voltages shown on Figure 12 may be found at any case tem- perature by using the appropriate curve on Figure 14. TJ(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations im- posed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage–current condition allowable dur- ing reverse biased turn–off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 13 gives the complete RBSOA characteristics. 0 Figure 14. Power Derating TC, CASE TEMPERATURE (°C) 0 40 80 80 40 100 120 160 200 60 20 THERMAL DERATING FORWARD BIAS SECOND BREAKDOWN DERATING |
Ähnliche Teilenummer - MJ13333 |
|
Ähnliche Beschreibung - MJ13333 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |