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TS13001CT Datenblatt(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Teilenummer TS13001CT
Bauteilbeschribung  High Voltage NPN Transistor
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Hersteller  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

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TS13001
1-2
2003/12 rev. B
TS13001
High Voltage NPN Transistor
Pin assignment:
1. Emitter
2. Collector
3. Base
BVCEO = 400V
BVCBO = 500V
Ic = 0.1A
VCE (SAT), = 0.5V @ Ic / Ib = 50mA / 10mA
Features
High voltage.
High speed switching
Structure
Silicon triple diffused type.
NPN silicon transistor
Ordering Information
Part No.
Packing
Package
TS13001CT
Bulk
TO-92
Absolute Maximum Rating (Ta = 25
oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
500V
V
Collector-Emitter Voltage
VCEO
400V
V
Emitter-Base Voltage
VEBO
9
V
DC
0.1
Collector Current
Pulse
IC
0.3
A
Collector Power Dissipation
TO-92
PD
0.6
W
Operating Junction Temperature
TJ
+150
oC
Operating Junction and Storage Temperature Range
TSTG
- 55 to +150
oC
Note: 1. Single pulse, Pw = 5mS, Duty <= 10%
Electrical Characteristics
Ta = 25
oC unless otherwise noted
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC = 10mA, IB = 0
BVCBO
500
--
--
V
Collector-Emitter Breakdown Voltage
IC = 10mA, IE = 0
BVCEO
400
--
--
V
Emitter-Base Breakdown Voltage
IE = 1mA, IC = 0
BVEBO
9
--
--
V
Collector Cutoff Current
VCB = 500V, IE = 0
ICBO
--
--
100
uA
Emitter Cutoff Current
VEB = 7V, IC = 0
IEBO
--
--
0.01
uA
Collector-Emitter Saturation Voltage
IC / IB = 50mA / 10mA
VCE(SAT)
--
--
0.5
V
DC Current Gain
VCE = 5V, IC = 20mA
hFE
10
--
40
Output Capacitance
VCB = 10V, f = 0.1MHz
Cob
--
4
--
pF
Storage Time
ts
--
--
2.0
Fall Time
VCE = 250V, IC = 5 Ib,
Ib1=Ib2=40mA
tf
--
--
0.8
uS
Note : pulse test: pulse width <=5mS, duty cycle <=10%


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