Datenblatt-Suchmaschine für elektronische Bauteile |
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TS13001CT Datenblatt(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TS13001CT Datenblatt(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 2 page TS13001 1-2 2003/12 rev. B TS13001 High Voltage NPN Transistor Pin assignment: 1. Emitter 2. Collector 3. Base BVCEO = 400V BVCBO = 500V Ic = 0.1A VCE (SAT), = 0.5V @ Ic / Ib = 50mA / 10mA Features High voltage. High speed switching Structure Silicon triple diffused type. NPN silicon transistor Ordering Information Part No. Packing Package TS13001CT Bulk TO-92 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 500V V Collector-Emitter Voltage VCEO 400V V Emitter-Base Voltage VEBO 9 V DC 0.1 Collector Current Pulse IC 0.3 A Collector Power Dissipation TO-92 PD 0.6 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: 1. Single pulse, Pw = 5mS, Duty <= 10% Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC = 10mA, IB = 0 BVCBO 500 -- -- V Collector-Emitter Breakdown Voltage IC = 10mA, IE = 0 BVCEO 400 -- -- V Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 BVEBO 9 -- -- V Collector Cutoff Current VCB = 500V, IE = 0 ICBO -- -- 100 uA Emitter Cutoff Current VEB = 7V, IC = 0 IEBO -- -- 0.01 uA Collector-Emitter Saturation Voltage IC / IB = 50mA / 10mA VCE(SAT) -- -- 0.5 V DC Current Gain VCE = 5V, IC = 20mA hFE 10 -- 40 Output Capacitance VCB = 10V, f = 0.1MHz Cob -- 4 -- pF Storage Time ts -- -- 2.0 Fall Time VCE = 250V, IC = 5 Ib, Ib1=Ib2=40mA tf -- -- 0.8 uS Note : pulse test: pulse width <=5mS, duty cycle <=10% |
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Ähnliche Beschreibung - TS13001CT |
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