Datenblatt-Suchmaschine für elektronische Bauteile |
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CSC2712GRG Datenblatt(PDF) 1 Page - Continental Device India Limited |
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CSC2712GRG Datenblatt(HTML) 1 Page - Continental Device India Limited |
1 / 3 page Continental Device India Limited Data Sheet Page 1 of 3 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) VCBO max. 60 V Collector-emitter voltage (open base) VCEO max. 50 V Emitter-base voltage (open collector) VEBO max. 5 V Collector current (peak value) IC max. 150 mA Total power dissipation at Tamb = 25°C Ptot max. 150 mW Junction temperature Tj max. 150 ° C D.C. current gain –IC = 2 mA; –VCE = 6V hFE min. 70 max. 700 Transition frequency IC = 1 mA; VCE = 10 V fT min. 80 MHz Noise figure at RS = 10 KW IC = 0.1 mA; VCE = 6V; f = 1 kHz F max 10 dB CSC2712 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR Marking CSC2712Y=1E CSC2712GR(G)=1F CSC2712BL(L)=1G IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package |
Ähnliche Teilenummer - CSC2712GRG |
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Ähnliche Beschreibung - CSC2712GRG |
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