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MJE5741 Datenblatt(PDF) 1 Page - ON Semiconductor

Teilenummer MJE5741
Bauteilbeschribung  POWER DARLINGTON TRANSISTORS
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Motorola Bipolar Power Transistor Device Data
NPN Silicon Power
Darlington Transistors
The MJE5740, 41, 42 Darlington transistors are designed for high–voltage power
switching in inductive circuits. They are particularly suited for operation in applications
such as:
• Small Engine Ignition
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
MAXIMUM RATINGS
Rating
Symbol
MJE5740
MJE5741
MJE5742
Unit
Collector–Emitter Voltage
VCEO(sus)
300
350
400
Vdc
Collector–Emitter Voltage
VCEV
600
700
800
Vdc
Emitter Base Voltage
VEB
8
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
8
16
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
2.5
5
Adc
Total Power Dissipation
@ TA = 25_C
Derate above 25
_C
PD
2
16
Watts
mW/
_C
Total Power Dissipation
@ TC = 25_C
Derate above 25
_C
PD
80
640
Watts
mW/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle = 10%.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.56
_C/W
Thermal Resistance, Junction to Ambient
R
θJA
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8
″ from Case for 5 Seconds
TL
275
_C
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (2)
Collector–Emitter Sustaining Voltage
MJE5740
(IC = 50 mA, IB = 0)
MJE5741
MJE5742
VCEO(sus)
300
350
400
Vdc
Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)
ICEV
1
5
mAdc
Emitter Cutoff Current (VEB = 8 Vdc, IC = 0)
IEBO
75
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
IS/b
See Figure 6
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 7
(2) Pulse Test: Pulse Width = 300
µs, Duty Cycle = 2%.
(continued)
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE5740/D
© Motorola, Inc. 1995
MJE5740
MJE5741
MJE5742
POWER DARLINGTON
TRANSISTORS
8 AMPERES
300, 350, 400 VOLTS
80 WATTS
*Motorola Preferred Device
≈ 100
≈ 50
*
*
CASE 221A–06
TO–220AB
REV 1


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