MJE5852 datasheet(3/8 Pages) ONSEMI

Teilenummer	MJE5852

Bauteilbeschribung	PNP SILICON POWER TRANSISTORS

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MJE5850 MJE5851 MJE5852

3

Motorola Bipolar Power Transistor Device Data

IC, COLLECTOR CURRENT (AMPS)

1.2

2.0

0.8

0

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

2.0

0.3

0.7

5.0

10

3.0

Figure 2. Collector Saturation Region

0.01

IB, BASE CURRENT (AMPS)

0.02

0.05

1.2

0.4

0

100

0.1

0.2

0.5

10

Figure 3. Collector–Emitter Saturation Voltage

Figure 4. Base–Emitter Voltage

Figure 5. Collector Cutoff Region

2.0

0.8

105

VBE, BASE–EMITTER VOLTAGE (VOLTS)

100

0

TJ = 150°C

20

0.5

2.0

– 0.4

Figure 6. Capacitance

3000

VR, REVERSE VOLTAGE (VOLTS)

Cib

0.1

104

103

102

101

+ 0.2

+ 0.1

100

°C

REVERSE

FORWARD

25

°C

VCE = 200 V

200

100

20

500 1000

1.6

0.4

TJ = 25°C

IC = 0.25 A

5.0

0.1

1.0

3.0

7.0

0.2

1.0

7.0

0.5

10

0.1

0.3

3.0

2.0

5.0

70

50

30

7.0

2000

1000

500

30

50

200

100

50

10

5.0

1.0

0.5

0.2

200

– 0.3

– 0.2

– 0.5

– 0.1

VCE = 5 V

1.0 A

1.0

2.0

5.0

1.6

IC/IB = 4

1.2

2.0

0.8

0

0.4

0.2

1.0

7.0

0.5

10

0.1

0.3

3.0

2.0

5.0

1.6

0.2

0.7

2.5 A

5.0 A

TJ = 25°C

TJ = 150°C

TJ = 25°C

IC/IB = 4

TJ = 150°C

TJ = 25°C

TJ = 150°C

Cob

TJ = 25°C

TYPICAL ELECTRICAL CHARACTERISTICS

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