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DRV8714-Q1 Datenblatt(PDF) 11 Page - Texas Instruments

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Teilenummer DRV8714-Q1
Bauteilbeschribung  DRV871x-Q1 Automotive Multi-Channel Smart Half-Bridge Gate Drivers With Wide Common Mode Current Sense Amplifiers
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7.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic
discharge
Human body model (HBM), per AEC Q100-002(1)
HBM ESD Classification Level 2
±2000
V
Charged device model (CDM), per AEC Q100-011
CDM ESD Classification Level C4B
Corner pins
±750
Other pins
±500
(1)
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
7.3 Recommended Operating Conditions
over operating temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VPVDD
Driver power supply voltage
PVDD
4.9
37
V
IHS (1)
High-side average gate-drive current
GHx
0
15
mA
ILS (1)
Low-side average gate-drive current
GLx
0
15
mA
VDVDD
Digital power supply voltage
DVDD
3
5.5
V
VDIN
Digital input voltage
BRAKE, DRVOFF/nFLT, INx/ENx, INx/
PHx, nSLEEP, nSCS, SCLK, SDI
0
5.5
V
IDOUT
Digital output current
SDO
0
5
mA
VOD
Open drain pullup voltage
DRVOFF/nFLT
0
5.5
V
IOD
Open drain output current
DRVOFF/nFLT
0
5
mA
VBRAKE
Brake input voltage
BRAKE
0
PVDD
V
VAREF
Amplfier reference supply voltage
AREF
3
5.5
V
ISO
Shunt amplifier output current
SOx
0
5
mA
TA
Operating ambient temperature
–40
125
°C
TJ
Operating junction temperature
–40
150
°C
(1)
Power dissipation and thermal limits must be observed
7.4 Thermal Information
THERMAL METRIC(1)
DRV8718-Q1
DRV8714-Q1
DRV8714-Q1
UNIT
RVJ (VQFN)
RVJ (VQFN)
RHA (VQFN)
56 PINS
56 PINs
40 PINS
RθJA
Junction-to-ambient thermal resistance
24.7
25.6
31
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
14.1
15.2
20.9
°C/W
RθJB
Junction-to-board thermal resistance
9.0
10.0
12.5
°C/W
ΨJT
Junction-to-top characterization parameter
0.2
0.2
0.2
°C/W
ΨJB
Junction-to-board characterization parameter
9.0
9.9
12.4
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
2.3
3.0
2.3
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.5 Electrical Characteristics
4.9 V ≤ VPVDD ≤ 37 V, –40°C ≤ TJ ≤ 150°C (unless otherwise noted). Typical limits apply for VPVDD = 13.5 V
and TJ = 25°C.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
POWER SUPPLIES (DRAIN, DVDD, PVDD, VCP)
IPVDDQ
PVDD sleep mode current
VPVDD, VDRAIN = 13.5 V, nSLEEP = 0 V
–40 ≤ TJ ≤ 85°C
5
10
µA
IDRAINQ
DRAIN sleep mode current
VPVDD, VDRAIN = 13.5 V, nSLEEP = 0 V
–40 ≤ TJ ≤ 85°C
1
1.75
µA
www.ti.com
DRV8714-Q1, DRV8718-Q1
SLVSEA2 – AUGUST 2020
Copyright © 2020 Texas Instruments Incorporated
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