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DRV8714-Q1 Datenblatt(PDF) 11 Page - Texas Instruments |
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DRV8714-Q1 Datenblatt(HTML) 11 Page - Texas Instruments |
11 / 144 page 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human body model (HBM), per AEC Q100-002(1) HBM ESD Classification Level 2 ±2000 V Charged device model (CDM), per AEC Q100-011 CDM ESD Classification Level C4B Corner pins ±750 Other pins ±500 (1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 7.3 Recommended Operating Conditions over operating temperature range (unless otherwise noted) MIN NOM MAX UNIT VPVDD Driver power supply voltage PVDD 4.9 37 V IHS (1) High-side average gate-drive current GHx 0 15 mA ILS (1) Low-side average gate-drive current GLx 0 15 mA VDVDD Digital power supply voltage DVDD 3 5.5 V VDIN Digital input voltage BRAKE, DRVOFF/nFLT, INx/ENx, INx/ PHx, nSLEEP, nSCS, SCLK, SDI 0 5.5 V IDOUT Digital output current SDO 0 5 mA VOD Open drain pullup voltage DRVOFF/nFLT 0 5.5 V IOD Open drain output current DRVOFF/nFLT 0 5 mA VBRAKE Brake input voltage BRAKE 0 PVDD V VAREF Amplfier reference supply voltage AREF 3 5.5 V ISO Shunt amplifier output current SOx 0 5 mA TA Operating ambient temperature –40 125 °C TJ Operating junction temperature –40 150 °C (1) Power dissipation and thermal limits must be observed 7.4 Thermal Information THERMAL METRIC(1) DRV8718-Q1 DRV8714-Q1 DRV8714-Q1 UNIT RVJ (VQFN) RVJ (VQFN) RHA (VQFN) 56 PINS 56 PINs 40 PINS RθJA Junction-to-ambient thermal resistance 24.7 25.6 31 °C/W RθJC(top) Junction-to-case (top) thermal resistance 14.1 15.2 20.9 °C/W RθJB Junction-to-board thermal resistance 9.0 10.0 12.5 °C/W ΨJT Junction-to-top characterization parameter 0.2 0.2 0.2 °C/W ΨJB Junction-to-board characterization parameter 9.0 9.9 12.4 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 2.3 3.0 2.3 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 7.5 Electrical Characteristics 4.9 V ≤ VPVDD ≤ 37 V, –40°C ≤ TJ ≤ 150°C (unless otherwise noted). Typical limits apply for VPVDD = 13.5 V and TJ = 25°C. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT POWER SUPPLIES (DRAIN, DVDD, PVDD, VCP) IPVDDQ PVDD sleep mode current VPVDD, VDRAIN = 13.5 V, nSLEEP = 0 V –40 ≤ TJ ≤ 85°C 5 10 µA IDRAINQ DRAIN sleep mode current VPVDD, VDRAIN = 13.5 V, nSLEEP = 0 V –40 ≤ TJ ≤ 85°C 1 1.75 µA www.ti.com DRV8714-Q1, DRV8718-Q1 SLVSEA2 – AUGUST 2020 Copyright © 2020 Texas Instruments Incorporated Submit Document Feedback 11 Product Folder Links: DRV8714-Q1 DRV8718-Q1 |
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