YFW3139K datasheet(2/4 Pages) YFWDIODE

Teilenummer	YFW3139K

Bauteilbeschribung	P-Channel MOSFET

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Hersteller	YFWDIODE [DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD]

Direct Link	http://www.yfwdiode.com/

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Dongguan YFW Electronics Co, Ltd.

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Drain-source breakdown voltage

V (BR)DSS

VGS = 0V, ID =-250μA

-20

V

Zero gate voltage drain current

IDSS

VDS =-20V,VGS = 0V

-1

μA

Gate-body leakage current

IGSS

VGS =±1

0V, VDS = 0V

±20

μA

Gate threshold voltage (note 2)

VGS(th)

VDS =VGS, ID =-250μA

-0.35

-0.45

-

V

VGS =-4.5V, ID =-1A

430

520

m

VGS =-2.5V, ID =-0.8A

624

700

m

Drain-source on-resistance (note 2)

RDS(on)

VGS =-1.8V, ID =-0.5A

950

m

Forward transconductance (note 2)

gFS

VDS =-10V, ID =-0.54A

1.2

S

Diode forward voltage

VSD

IS=-0.5A, VGS = 0V

-1.2

V

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Input capacitance

Ciss

113

170

pF

Output capacitance

Coss

15

25

pF

Reverse transfer capacitance

Crss

VDS =-16V,VGS =0V,f =1MHz

9

15

pF

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Turn-on delay time

(note 3)

td(on)

9

ns

Turn-on rise time

(note 3)

tr

5.8

ns

Turn-off delay time

(note3)

td(off)

32.7

ns

Turn-off fall time

(note 3)

tf

VGS=-4.5V,VDS=-10V,

ID =-200mA,RGEN=10

20.3

ns

1RWHV

1. Surface mounted on FR4 board using the minimum recommended pad size.

2. Pulse Test : Pulse Width=300μs, Duty Cycle=2%.

3. Switching characteristics are independent of operating junction temperatures.

4. Guaranteed by design, not subject to producting.

Electrical Characteristics Ta = 25

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