KM416S1021CT-G8 datasheet(4/8 Pages) SAMSUNG

Teilenummer	KM416S1021CT-G8

Bauteilbeschribung	512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface

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Hersteller	SAMSUNG [Samsung semiconductor]

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KM416S1021C

REV. 1. May '98

CMOS SDRAM

Preliminary

DC CHARACTERISTICS

(Recommended operating condition unless otherwise noted, TA = 0 to 70

°C)

Parameter

Symbol

Test Condition

CAS

Latency

Version

Unit

Note

-7

-S

-8

Operating current

(One bank active)

ICC1

Burst length = 1

tRC

≥ tRC(min)

IOL = 0 mA

95

90

95

mA

1

Precharge standby current in

power-down mode

ICC2P

CKE

≤ VIL(max), tCC = 15ns

2

mA

ICC2PS

CKE & CLK

≤ VIL(max), tCC = ∞

2

Precharge standby current in

non power-down mode

ICC2N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 15ns

Input signals are changed one time during 30ns

20

mA

ICC2NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

6

Active standby current in

power-down mode

ICC3P

CKE

≤ VIL(max), tCC = 15ns

3

mA

ICC3PS

CKE & CLK

≤ VIL(max), tCC = ∞

2

Active Standby current in

non power-down mode

(One bank active)

ICC3N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 15ns

Input signals are changed one time during 30ns

30

mA

ICC3NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

20

mA

Operating current

(Burst mode)

ICC4

IOL = 0 mA

Page burst

tCCD = 2CLKs

3

150

140

130

mA

1

2

105

100

Refresh current

ICC5

tRC

≥ tRC(min)

90

85

80

mA

2

Self refresh current

ICC6

CKE

≤ VIL(max)

2

mA

3

1. Measured with outputs open.

2. Refresh period is 64ms.

Notes :

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