TPC8016-H datasheet(3/7 Pages) TOSHIBA

Teilenummer	TPC8016-H

Bauteilbeschribung	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III)

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Hersteller	TOSHIBA [Toshiba Semiconductor]

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3 / 7 page

TPC8016-H

2003-07-14

3

Electrical Characteristics (Ta

= 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, V DS = 0 V



±10

µA

Drain cut-OFF current

IDSS

VDS = 30 V, V GS = 0 V



10

µA

V (BR) DSS

ID = 10 mA, VGS = 0 V

30



Drain-source breakdown voltage

V (BR) DSX

ID = 10 mA, VGS = −20 V

15



V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

1.1



2.3

V

VGS = 4.5 V , ID = 7.5 A



5.5

7.5

Drain-source ON resistance

RDS (ON)

VGS = 10 V , ID = 7.5 A



3.7

5.7

m

Ω

Forward transfer admittance

|Yfs|

VDS = 10 V , ID = 7.5 A

12.5

25



S

Input capacitance

Ciss



2380



Reverse transfer capacitance

Crss



410



Output capacitance

Coss

VDS = 10 V , VGS = 0 V , f = 1 MHz



980



pF

Rise time

tr



9.8



Turn-ON time

ton



21



Fall time

tf



15



Switching time

Turn-OFF time

toff

Duty <

= 1%, tw = 10 µs



60



ns

VDD ∼

− 24 V, VGS = 10 V , ID = 15 A



46



Total gate charge

(gate-source plus gate-drain)

Qg

VDD ∼

− 24 V, VGS = 5 V, ID = 15 A



26



Gate-source charge 1

Qgs1



7.2



Gate-drain (“miller”) charge

Qgd



12.2



Gate switch charge

QSW

VDD ∼

− 24 V, VGS = 10 V , ID = 15 A



15.6



nC

Source-Drain Ratings and Characteristics (Ta

= 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse

(Note 1)

IDRP



60

A

Forward voltage (diode)

VDSF

IDR = 15 A, V GS = 0 V



−1.2

V

VDD ∼

− 15 V

0 V

VGS

10 V

ID = 7.5 A

VOUT

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