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AOB282L Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer AOB282L
Bauteilbeschribung  isc N-Channel MOSFET Transistor
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

AOB282L Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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1
isc N-Channel MOSFET Transistor
AOB282L
·
FEATURES
·
Drain Current –ID= 105A@ TC=25℃
·
Drain Source Voltage-
: VDSS= 80V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) = 3.2mΩ(Max)
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
DESCRITION
·
Be suitable for synchronous rectification for server and
general purpose applications
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
80
V
VGS
Gate-Source Voltage
±
20
V
ID
Drain Current-Continuous
105
A
IDM
Drain Current-Single Pulsed
420
A
PD
Total Dissipation @TC=25℃
272.5
W
Tj
Max. Operating Junction Temperature
-55~175
℃
Tstg
Storage Temperature
-55~175
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c)
Channel-to-case thermal resistance
0.55
℃
/W


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